05. - 07.06.2018
Power Electronics | Intelligent Motion | Renewable Energy | Energy Management
SiC Devices I
Tuesday, 05.06.2018, 14:00 - 15:15 hrs
Andreas Lindemann, Otto-von-Guericke-University Magdeburg, D
A 3.3 kV/800 A Ultra-High Power Density SiC Power Module
A 3.3 kV/800 A SiC power module was developed adopting the next High Power Density Dual (nHPD2) package. The ultra-high power density value of 37.7 kVA/cm2 was realized by constituting the module with only SiC-MOSFETs. Furthermore, as a countermeasure for "bipolar degradation" issues of body diodes in SiC-MOSFET, we also deployed new high-throughput screening process technology. The low-loss and high reliability characteristics of the module are demonstrated.
Mission Profile Analysis of a 1200V Silicon-Carbide Trench- MOSFET Module for Automotive Traction Inverter Applications
This paper investigates the mission profile efficiency performance of a 1200V full-SiC Trench-Mosfet Module based on Infineon’s Automotive CoolSiCTM technology, suitable for traction inverter applications. This module is compared against a full-Silicon (Si) module with Si Insulated Gate Bipolar Transistors (IGBTs)/diodes, and a hybrid Silicon Carbide (SiC) module with Si IGBTs and SiC diodes.
Applying the 2D-Short Circuit Detection Method to SiC MOSFETs Including an Advanced Soft Turn Off
Nominated for the Young Engineer Award
To address the problem of small short circuit withstand times of SiC MOSFETs, this paper presents a short circuit protection, which detects the fault close to the earliest time possible and turns off the device safely. For the detection, the 2D-short circuit detection method was adapted to SiC MOSFETs. As SiC MOSFETs have to be turned off softly, a turn off strategy is shown which is able to turn-off the device during a short circuit type 1 and a short circuit type 2 in an optimized way.
University of Bayreuth, Bayreuth, Deutschland
Patrick Hofstetter received his B.Sc. and M.Sc. degree in Electrical Engineering from the Friedrich-Alexander University Erlangen-Nuremberg in 2014 and 2016, respectively. He is currently working towards his PhD at the University of Bayreuth in the field of power elextronics, where he does research on SiC MOSFETs for the application in urban mobility.
Hitachi Power Semiconductor Device, Hitachi-shi, Ibaraki, Japan
Takashi Ishigaki received the B.E. and M.E. degrees from Kobe University in 1999 and 2001, respectively, and the Ph.D. degree from Tokyo Institute of Technology in 2012. He joined NEC Corporation, Otsu, Japan, in 2001. Since 2004, he has been with the Central Research Laboratory, Hitachi, Ltd., Tokyo, Japan. He has been engaged in the research and development of GaAs HEMTs/HBTs, high-capacity flash memories, SOI CMOSFETs, spin-transferred magnetic memories, and wide-bandgap semiconductor-based power devices.
Infineon Technologies, Neubiberg, Deutschland
Ajay Poonjal Pai obtained his B.Tech in Electrical Engineering from the National Institute of Technology Karnataka Surathkal, India in 2010 and his M.Sc. in Electrical Power Engineering from RWTH Aachen University, Germany in 2014. Since 2015, he is working towards his Ph.D. jointly with Infineon Technologies AG, Neubiberg, Germany and the University of Erlangen-Nuremberg. His interests include Silicon Carbide semiconductors and power electronics.