05. - 07.06.2018
PCIM Europe 2018
Power Electronics | Intelligent Motion | Renewable Energy | Energy Management


Oral Session

SiC based Power Module


Tuesday, 05.06.2018, 11:00 - 12:40 hrs


München 1


Manfred Schlenk, Infineon Technologies, D


11:00 New SiC 1200V Power MOSFET & Compact 3.25 m?, 41mm Power Module for Industrial Applications
Dr. Jeffrey Casady, Wolfspeed, Durham, USA
For the first time, a new SiC chip & module combination is designed and characterized for optimal performance and cost. The chip is a 1200V, 13m? SiC MOSFET designed for a ½ bridge power module with no need for individual RG inside the module, improved shoot-through immunity, low RDSON of 23m? at 175°C, and low CRSS of 12pF. The compact 41mm module allows up to four MOSFETs per switch, IDS rating of 340A (~ 7x higher than Si baseline modules) and lower RDSON (3.25m?) than commercial SiC modules over twice its size.
11:25 A Wire-bond-less 10 kV SiC MOSFET Power Module with Reduced Common-mode Noise and Electric Field
Christina DiMarino, CPES, Viriginia Tech, Blacksburg, USA
While wide-bandgap devices offer many benefits, they also bring new challenges. The new 10kV SiC MOSFETs can switch higher voltages faster and with lower losses than silicon devices while also being smaller in size. In order to fully utilize the benefits of these unique devices, this work proposes a module package with high power density (18W/mm3), increased partial discharge inception voltage (67%), low thermal resistance (0.38K/W junction-to-ambient), small inductance (4nH), fast switching (200V/ns), and reduced common-mode noise (50%).
11:50 Enhanced Breakdown Voltage and High Current of All-SiC Modules with 1st Generation Trench Gate SiC MOSFETs
B.A. Motohito Hori, Fuji Electric, Matsumoto, Nagano, Japan
In order to expand the application range of Silicone Carbide (SiC), SiC modules with 1st generation trench gate SiC MOSFETs from small capacity to large capacity were developed. This paper presents the package technologies of enhanced breakdown voltage and high current for All-SiC modules.
12:15 Highly Integrated SiC-power Modules for Ultra-Fast Lithium Ion Battery Chargers in LLC-Topology
Dipl.-Ing. Thomas Blank, Karlsruhe Institute of Technology, Eggenstein-Leopoldshafen, Deutschland
A compact version of a SiC LLC converter for ultra-fast-charging of lithium-ion batteries is presented. The module can deliver a power of 40 kW, paralleled up to 350 kW. The system has been designed for highest reliability in a 24h/7d scenario. An Aurix processor controls the system. The SiC power devices are integrated in an Econopack 2, utilizing Si3N4 substrates, silver sinter die attach and CuCoreAl bonding technology. The LLC resonant tank is immersion cooled. Hence, a reliable, highly integrated ultra-fast charging system is realized.


Speaker detail

Dipl.-Ing. Thomas Blank
Karlsruhe Institute of Technology, Eggenstein-Leopoldshafen, Deutschland
Dr. Thomas Blank studied electrical engineering in Karlsruhe and received his PHD in mechanical engineering from KIT. He is heading the group for electronic packaging and Interconnects and huge lithium-ion batteries at the Institute for Data Processing and Electronics of KIT. His research interest are packaging methods for highly reliable power electronic modules and lithium-ion batteries.
Dr. Jeffrey Casady
Dr. Jeffrey Casady
Wolfspeed, Durham, USA
Dr. Casady has worked in SiC power and analog semiconductor technology since 1994, and has been with Cree / Wolfspeed since 2012. Currently he is responsible for being the evangelist of future technology roadmap to all potential customers, including business development, marketing, sales, and program management responsibilities. Dr. Casady received his Ph.D. in Electrical Engineering from Auburn University. He is author or co-author of four book chapters, >80 technical publications, numerous patents.
Ms. Christina DiMarino
Christina DiMarino
CPES, Viriginia Tech, Blacksburg, USA
Christina DiMarino received her Bachelor's degree in engineering from James Madison University in Virginia in 2012. She joined the Center for Power Electronics Systems (CPES) at Virginia Tech in the United States in the fall of 2012 as a direct Ph.D. student. In 2014, Christina earned her Master's degree at CPES for her work on the high-temperature characterization of silicon carbide transistors. She is now in her fourth year of her Ph.D. and is working on the high-density packaging of 10 kV silicon carbide MOSFETs.
Mr. Motohito Hori
B.A. Motohito Hori
Fuji Electric, Matsumoto, Nagano, Japan
I received B.S. from Hokkaido University in 1991. I am now working at Fuji Electric Co., Ltd. I am engaged in the development of SiC modules.