05. - 07.06.2018
PCIM Europe 2018
Power Electronics | Intelligent Motion | Renewable Energy | Energy Management


Tutorial 7

Reliability of Si and SiC Power Devices and Packages


Monday, 04.06.2018, 09:00 - 17:00 hrs


Arvena Park Hotel Nuremberg, Görlitzer Str. 51, 90473 Nuremberg


09:00 Reliability of Si and SiC Power Devices and Packages
Prof. Dr. Josef Lutz, Chemnitz University of Technology, Chemnitz, Deutschland
Focus is on thermal problems and other lifetime-limiting mechanisms in power devices, aspects going from Si to SiC are considered.

1. Basic architecture of Si and SiC power modules and discrete packages

2. Materials, substrates and interconnection technologies

3. Heat transport, thermal resistance, thermal impedance, cooling methods

4. Temperature determination
- Virtual junction temperature: Definition, measurement
- Temperature sensitive electrical parameters in Si, SiC, GaN

5. Fatigue processes, fatigue detection, related tests

6. Power cycling as main method to determine package related lifetime expectation
- Experimental setup, test strategies
- Test according to the German automotive standard LV 324
- New methods for state-of-health analysis

7. Empirical models for lifetime prediction
- LESIT model, CIPS 2008 model for power modules
- Application of available models, limits, work on new models
- Special aspects with discrete packages
- Special aspects with SiC devices
- First results with GaN devices

8. Improved technologies and future trends for increased lifetime expectation
- Diffusion sintering, Diffusion soldering,
- Improved bond wires,
- Improved substrates

9. Gate oxide reliability in Si and SiC

10. Some aspects on cosmic ray reliability
- Cosmic ray sources
- Failure pattern
- Failure mechanism
- Comparison SiC devices and Si devices

Who should attend?
Engineers in design of converters with IGBTs and SiC devices with interest in reliability, beginners as well as experienced engineers are welcome.


Speaker detail

Professor Josef Lutz
Prof. Dr. Josef Lutz
Chemnitz University of Technology, Chemnitz, Deutschland
Josef Lutz joined Semikron Electronics, Nuremberg, Germany in 1983. First he worked in the development of GTO Thyristors, then in the field of fast recovery diodes. He introduced the Controlled Axial Lifetime (CAL) diode. Since August 2001 he is Professor for Power Electronics and Electromagnetic Compatibility at the Chemnitz University of Technology, Germany. His main fields of research are ruggedness and reliability of power devices. He is involved in several national and international research projects regarding reliability of IGBTs and wide bandgap devices. He is one of the authors of the book "Semiconductor Power Devices - Physics, Characteristics, Reliability", published by Springer 2011.