05. - 07.06.2018
PCIM Europe 2018
Power Electronics | Intelligent Motion | Renewable Energy | Energy Management


Tutorial 5

Advanced System Design with Ultra-Fast Si/SiC/GaN Power Semiconductor Devices


Monday, 04.06.2018, 09:00 - 17:00 hrs


Arvena Park Hotel Nuremberg, Görlitzer Str. 51, 90473 Nuremberg


09:00 Advanced System Design with Ultra-Fast Si/SiC/GaN Power Semiconductor Devices
Prof. Dr. Tobias Reimann, ISLE Steuerungstechnik und Leistungselektronik, Ilmenau, Deutschland
Dr. Thomas Basler, Infineon Technologies, Neubiberg, Deutschland
Fast Power Devices / Modules / Reliability
- New developments in fast power devices (SiC/Si MOSFETs, IGBTs, GaN devices, freewheeling diodes)
- Device design, properties and suitable applications
- Reliability topics of (new) devices, e.g. gate oxide, dynamic Ron, cosmic ray ruggedness
- Power module layouts and optimal design for low inductivity
- Thermal mismatch, thermal stress, power cycling capability

Drive and Protection
- Principles, technical realizations
- Special driver requirements for fast power devices (Si, SiC, GaN)
- Failure modes, failure detection

Topology-dependent Power Losses
- dc/dc-converter
- dc/ac-converter
- Load Cycles
- Calculation of heat sink

Device Induced Electromagnetic Disturbance
- Parasitics
- Oscillations in Power Modules

Special Topics of Application
Consideration of special problems and questions of participants, for example:
- Parallel/series connection of power devices
- Special effects in ZVS/ZCS topologies
- Special problems related to new device technologies
- Short-circuit ruggedness of IGBTs and SiC MOSFETs

Who should attend?
Engineers designing converters equipped with fast power semiconductors like Si/SiC MOSFETs, IGBTs and diodes having basic knowledge in power devices and power converters.


Speaker detail

Dr. Thomas Basler
Dr. Thomas Basler
Infineon Technologies, Neubiberg, Deutschland
Thomas Basler received his Diploma in Electrical Engineering from Chemnitz University of Technology in 2009. His Diploma thesis was on the robustness of power diodes. Between 2009 and 2013 he was a member of the scientific staff at the Chair of Power Electronics and Electromagnetic Compatibility at Chemnitz University of Technology. At the beginning of 2014 he received his PhD. His thesis is about short-circuit and surge-current ruggedness of IGBTs and was supervised by Prof. Dr. Josef Lutz. 2014 he joined Infineon Technologies AG, Neubiberg, Germany, where he works on the development of SiC MOSFETs, diodes and Si IGBTs.
Professor Tobias Reimann
Prof. Dr. Tobias Reimann
ISLE Steuerungstechnik und Leistungselektronik, Ilmenau, Deutschland
Tobias Reimann received 1994 his PhD from the Technische Universität Ilmenau in the field of power semiconductor applications for hard and soft switching converters. In 1994 he was one of the founders of the company ISLE GmbH which is engaged in system development for power electronics and electrical drives. He is responsible for the operational business of this company. In addition, since July 2009 he is Professor for Industrial Electronics at Technische Universität Ilmenau. Prof. Reimann is a member of scientific board of "Thuringian Center of Excellence in Mobility (ThIMo)" at Technische Universität Ilmenau in the field of automotive electronics.