05. - 07.06.2018
PCIM Europe 2018
Power Electronics | Intelligent Motion | Renewable Energy | Energy Management


Seminar 3

Wide Band Gap (WBG) Power Devices, Characterisation, Simulation and Testing


Sunday, 03.06.2018, 14:00 - 17:30 hrs


Arvena Park Hotel Nuremberg, Görlitzer Str. 51, 90473 Nuremberg


14:00 Wide Band Gap (WBG) Power Devices, Characterisation, Simulation and Testing
M.Eng. Edward Shelton, Cambridge University, Cambridge, Grossbritannien
Dr. Patrick Palmer, Cambridge University, Cambridge, Grossbritannien
Geoff Haynes, Inspirit Ventures, Blandford St. Mary, Grossbritannien
Dr. Giorgia Longobardi, Kyushu Institute of Technology, Kitakyushu, Japan
Edgar Ayerbe, Wolfspeed, Durham, USA
The presentation will start with a high-level overview of GaN and SiC transistors; device structures and characteristics; the advantages they offer over conventional Silicon; the applications and markets that can benefit from these power devices; and industry trends and emerging technologies. [Geoff Haynes]

We will then delve into the technical details of GaN power transistors, focusing on the most promising normally-off technologies. We will cover the main engineering challenges that are faced by engineers
using GaN devices today, including the effects of circuit parasitics and device packaging. Reliability issues occurring when GaN transistors are subject to high voltage stress will be then discussed and the available device level solutions to such issues will be presented. We will conclude this section by looking at simulation modelling and tools. [Giorgia Longobardi]

Next we will look at the details of SiC power MOSFETs, the various competing structures used for thesedevices, manufacturing processes, and compare the advantages of each approach from different manufacturers. We will discuss how this creates devices with some unique properties and switching characteristics. The relevance of these properties to particular applications will also be discussed. The audience will be guided past some of the potential pitfalls that users should be aware of. Test waveforms
will be presented and analysed. Simulation models and tools will be discussed and results demonstrated.[Edgar Ayerbe]

Following on from this, we will look at the design of WBG test circuits. The difficulties of taking reliable and meaningful measurement data will be discussed. Circuits that the authors have developed will be presented. The key implementation details of these circuits will be described and test results shown to demonstrate their effectiveness. [Ed Shelton]

Finally, switching test results for various market-leading WBG and Si devices will be examined and compared. Straightforward numerical analysis will be applied to quantify performance and arrive at appropriate test circuit optimisations and solutions. A comparison to simulation results will be made and the accuracy of available simulation models and tools examined. [Patrick Palmer]

Finally, we will wrap up the session with a summary and reminder of what has been covered and what has been learned, as well as a discussion of challenges and opportunities for the future in the WBG industry. This will be followed by a Q & A session, where the audience will have the opportunity to clarify presentation details, and will be invited to explore areas of further interest with the speakers.

The goal of this presentation is to demonstrate how to achieve practical, efficient and reliable operation of
WBG devices in high-frequency high-power switching circuits, by:
1. Understanding the fundamental principles of operation, benefits and limitations of WBG devices.
2. Apprising effectiveness of simulation and modelling techniques, and other design tools available.
3. Test circuits and measurement systems that achieve performance required for proper evaluation.
4. Examining test waveforms and analysing circuit behaviour. Comparison between power devices.
5. Designing circuits that achieve an optimum price / performance point.

Who should attend?
The presentation is aimed at all levels of listener, starting with material to engage the novice, through to detailed technical material for the accomplished engineer. The aim is to get listeners of all abilities to the point where they can understand WBG devices and successfully test their own circuits.


Speaker detail

Mr. Edgar Ayerbe
Edgar Ayerbe
Wolfspeed, Durham, USA
Edgar Ayerbe graduated from Rensselaer Polytechnic Institute in 1995 and has since worked for a number of leading businesses in the semiconductor industry. He joined CREE in 2011 and is currently involved in marketing and simulation modelling of their SiC MOSFETs.
Mr. Geoff Haynes
Geoff Haynes
Inspirit Ventures, Blandford St. Mary, Grossbritannien
Geoff Haynes is a serial entrepreneur: He has a life-time of experience in the semiconductor industry. He was co-founder of GaN Systems Inc., and now works as a freelance consultant. He is also part of an activity commericalising university research in the UK.
Dr. Giorgia Longobardi
Dr. Giorgia Longobardi
Kyushu Institute of Technology, Kitakyushu, Japan
Dr Giorgia Longobardi is currently a JSPS Fellow at Kyutech, Japan. From 2010 to 2017 she has been working on modeling, characterization, and simulations of GaN power devices at Cambridge University, where she received the PhD in 2014. She is cofounder of Cambridge GaN Devices Ltd.
Dr. Patrick Palmer
Dr. Patrick Palmer
Cambridge University, Cambridge, Grossbritannien
Dr Patrick Palmer received his PhD from Imperial College London. He has been an academic at the University of Cambridge for over 25 years, teaching power electronics. He was a co-founder of Amantys Ltd. He is a Chartered Engineer and has published more than 150 articles and papers.
Mr. Edward Shelton
M.Eng. Edward Shelton
Cambridge University, Cambridge, Grossbritannien
Ed Shelton graduated from the University of Cambridge in 1997. He has since worked for a number of high-tech businesses, more recently focusing on power systems as Senior Engineer at Amantys Ltd. Since 2015 he has been a Senior Research Associate at the University of Cambridge and freelance consultant.