05. - 07.06.2018
PCIM Europe 2018
Power Electronics | Intelligent Motion | Renewable Energy | Energy Management


Poster Session

Control and Drive Strategies


Wednesday, 06.06.2018, 15:15 - 17:30 hrs


Hans Ertl, Vienna University of Technology, A


15:15 Synchronization and Control of Modular AC- and DC-Sided Parallel-Connected Three-Level NPC Inverters
B.Eng. Jochen Staiger, University of Aalen, Aalen, Deutschland
This paper describes the synchronization and control of modular three-level NPC inverters, which are connected AC- and DC-sided in parallel. By this, zero-sequence circulating currents are occurring due to several reasons. To avoid circulating currents, a control strategy in combination with a PLL-based synchronization method, which does not require any communication between the inverters, is introduced. Experimental results proof the feasibility of the synchronization method and simulations validate the developed control structure.
15:15 Comparison of Two Model based Temperature Control Sysems Implemented on a Three Level T-Type Inverter
Dipl.-Ing. Julian Felix Wölfle, University of Stuttgart, Stuttgart, Deutschland
This paper presents two model based temperature control systems to increase the expectedlifetime of IGBT-power-modules. The increase of the expected lifetime is achieved by increasingthe power losses during low load conditions in order to decrease the junction temperatureswings of the semiconductor devices in IGBT-power-modules. Each temperaturecontrol system uses two different correcting variables. As correcting variables the currentamplitude and the switching frequency are used.
15:15 Real-Time Development Interface Embedded in a Compact Motion Controller
Dr.-Ing. Josef Reill, DLR- German Aerospace Center, Weßling, Deutschland
A real-time interface for motor control development embedded in a single PCB is presented. The CPU is supporting EtherCAT communication and computes the control algorithm that can be implemented with Matlab/Simulink toolchain. The host PC is able to connect to the running code via EtherCAT by use of EoE directly. The developer is able to monitor and manipulate all Simulink signals of the deployed model during runtime. Manipulation of constant block values is also feasible to e.g. investigate on different controller parameters online.
15:15 Optimized PWM Technique for Overmodulation Region in Vector Controlled High Speed Drives
Dr. Peter Stumpf, Budapest University of Technology and Economics, Department of Automation and Applied Informatics, Budapest, Ungarn
An optimized PWM technique for the overmodulation region of two-level three-phase inverter-fed high speed ac drives is introduced in the paper. The optimization is elaborated for the lowest loss-factor, which is proportional to the square of rms value of current harmonics. In the paper the application of the technique is presented for closed loop controlled drives.
15:15 Dynamic Space Vector Modulation Control for Asymmetric Neutral Point Clamped Multilevel Inverter
M.Sc. Syed Inam Ul Murtaza Shah, Euro Engineering, Auerbach i.d.OPf., Deutschland
A dynamic space vector modulation control is developed for a neutral point clamped three-level inverter for automotive applications. The developed SVPWM adresses changes in space-vector hexagon with asymmtery in DC battery voltages and implements controls for both symmetric and asymmetric dc battery voltages.
15:15 Short Pulse Transmission for SiC Communicating Gate Driver Under High Dv/Dt
Dipl.-Ing. Julien Weckbrodt, University of Nantes, Nantes, Frankreich
A unidirectional data transmission for gate drivers based on a pulse transformer system is presented. We focus on pulse transformers integrated on gate drivers used for aeronautical applications. The integration of communication functions can achieve real time setting of the device for a better flexibility and efficiency. First, an accurate model has been developed to simulate the pulse transformer regarding the pulse shape. Then, an experimental circuit was designed to test short pulses transmission through the isolation of gate drivers.
15:15 Advanced Functionality of HVIC Technology for Intelligent Power Module
M.Eng. Jinkyu Choi, ON Semiconductor, Bucheon-si, Gyeonggi-do, Repub, Südkorea
Recently, many parts of the Power semiconductor devices are being replaced by IPM (Intelligent Power Module) in the motor control application. IPMs can help to reduce the number of parts and size, to simplify the design of systems, to be used wide-ranging application including industrial consumer electronics such as industrial motor.
15:15 Three-Level-Gate-Driver to Run Power Transistors in the Saturation Region for Junction Temperature Control
M.Sc. Johannes Ruthardt, University of Stuttgart, Stuttgart, Deutschland
One of the main influencing factors on reliability and lifetime of power semiconductor devices is the thermal stress induced by load alternation. Junction temperature control systems are able to reduce the thermal stress. To control the junction temperature an option to influence the power losses of the power semiconductor devices is required. The proposed three-level-gate-driver offers the option to run power transistors in the saturation region and therefore to produce additional losses in order to control the junction temperature.
15:15 SiC MOSFET Gate Driver for High Switching Frequency and High dv/dt
Christophe BOUGUET, University of Nantes IETR, Nantes Cedex 3, Frankreich
In the field of power electronics, the interest of manufacturers for wide band gap components recently increased. They currently seem to opt for SiC MOSFETS when selecting a transistor. Their implementation involves new challenges. Not only their switching speed is higher than with Si MOSFET or IGBT but the DC voltage they can hold is also higher. From these two main changes it follows that the drivers in charge of their gate control must adapt to these new constraints. The development of a gate driver dedicated to SiC MOSFET is presented.
15:15 Improved Gate-Drive Unit for RC-IGBT to Overcome Load Current Disturbance in Static MOS-Control
M.Sc. Daniel Lexow, University of Rostock, Rostock, Deutschland
State-of-the-art RC-IGBT gate-drive units feature an immediate static MOS-control to react to a load current zero-crossing (CZC). This signifies, that after a current transition is detected, the gate-drive unit switches the RC-IGBT instantly into its low conduction loss state. Therefore, the occurrence of interfering oscillations during load CZC directly leads to an oscillating gate-drive voltage. The implementation of a blanking time into the gate-drive scheme to overcome this misbehavior is examined in ths paper.
15:15 AC Input Current Distortions and Compensation Schemes of PFC Stages Working in Critical Conduction Mode
Dr.-Ing. Markus Schmid, Infineon Technologies, Neubiberg, Deutschland
Active PFC stages are often driven in Critical Conduction Mode with valley switching and frequency limitation. This control method implicates AC current distortions especially with lower power level or higher AC input voltage. The paper illustrates the mechanisms resulting in these distortions and proposes compensation methods implemented with help of a digital controller. Furthermore, the influence of the EMI filter capacitor on the input current is examined. A compensation method is proposed
15:15 Assessment-Based Flux Trajectory Optimization and Pulse Width Modulation for Flux-Oriented Control: A Comparison
M.Sc. Axel Rothstein, Ruhr-University Bochum, Bochum, Deutschland
This paper compares two concepts to guide the flux along a given trajectory. One is based on the well-known pulse-width modulation (PWM), the other one on the relatively new assessment-based flux-trajectory optimization (AFO). Both are able to dynamically handle unsymmetrical flux trajectories, and both can be implemented with low effort. The comparison highlights advantages and disadvantages of the control concepts.


Speaker detail

Christophe BOUGUET
University of Nantes IETR, Nantes Cedex 3, Frankreich
Christophe Bouguet works as a post-doc in the Ecole Polytechnique de l'Université de Nantes, Nantes, France. He conducts research with the Institute of Electronics and Telecommunications of Rennes (IETR) where he works on "smart drivers for power semiconductors".
M.Eng. Jinkyu Choi
ON Semiconductor, Bucheon-si, Gyeonggi-do, Repub, Südkorea
Staff Design Engineer of Gate driver Business unitON Semiconductor (Aug.2011 – Now)
Herr Daniel Lexow
M.Sc. Daniel Lexow
University of Rostock, Rostock, Deutschland
Daniel Lexow studied electrical engineering as well as History and Sport Science for teaching at secondary schools at the University of Rostock. He received his B.Sc. in electrical engineering in 2012, his first state exam in History and Sport Science in 2014 as well as his M.Sc. in electrical engineering in 2014 at the University of Rostock. Since August 2014 he has worked as research assistant at the institute of Electrical Power Engineering, University of Rostock. His main research interest is the investigation of reverse conducting IGBTs.
Dr. Josef Reill
Dr.-Ing. Josef Reill
DLR- German Aerospace Center, Weßling, Deutschland
Dr.-Ing. Josef Reill received the degree in electrical engineering from the FAU-Universität Erlangen-Nürnberg, Germany in 2005 and the Dr.-Ing. degree in 2010. During his PhD studies he was focused on the optimisation of vector and sensorless control of permanent magnet synchronous motors. Since November 2009 he is with the German Aerospace Center, Institute of Robotics and Mechatronics. His area of activity is the control of drives in robotic joints for terrestrial and space applications.
Herr Axel Rothstein
M.Sc. Axel Rothstein
Ruhr-University Bochum, Bochum, Deutschland
Axel Rothstein received the B.Sc. and M.Sc. degree in electrical engineering from the Ruhr-University Bochum, Germany, in 2011 and 2013. In 2014, he joined the Department of Power Systems Technology and Power Mechatronics, Ruhr-University Bochum, as a research assistant. His main areas of research interest are properties and control of power converter for traction and grid applications and their control systems.
M.Sc. Johannes Ruthardt
University of Stuttgart, Stuttgart, Deutschland
Johannes Ruthardt works as a research associate at the University of Stuttgart. His topic is the releability of semiconductor devices.
Herr Dr. Markus Schmid
Dr.-Ing. Markus Schmid
Infineon Technologies, Neubiberg, Deutschland
Markus Schmid received the Dipl.-Ing. degree and the Ph.D. degree in electrical engineering from the University of Erlangen-Nuremberg in 2006 and 2012, respectively. Since 2014 he is working for Infineon Technologies AG in AC-DC IC development. His current research interests include power electronics and control as well as firmware development.
Herr Syed Inam Ul Murtaza Shah
M.Sc. Syed Inam Ul Murtaza Shah
Euro Engineering, Auerbach i.d.OPf., Deutschland
Inam Shah received his Bachelors degree in Electronic Engineering in 2012 from Pakistan and his Masters degree in Electrical Engineering in 2016 from Hocshcule Darmstadt, Germany. Since then, he is working as Electronic Development Engineer in Automotive Industry.
Mr. Jochen Staiger
B.Eng. Jochen Staiger
University of Aalen, Aalen, Deutschland
Jochen received the B. Eng. degree in Electronics from Aalen University of Applied Sciences, Aalen, Germany, in 2014. Since 2014, he has been a Research Assistant with the Laboratory of Power Electronics and Electrical Drives at Aalen University of Applied Sciences. Currently he is working toward the M. Sc. degree in Advanced Systems Design at Aalen University, Aalen, Germany. His main research interests include the control of electrical drives, energy storage systems as well as grid feed.
Dr. Peter Stumpf
Dr. Peter Stumpf
Budapest University of Technology and Economics, Department of Automation and Applied Informatics, Budapest, Ungarn
Peter Stumpf received the M.Sc. and Ph.D. degree from Budapest University of Technology and Economics, Budapest, where he is currentlyworking as a senior lecturer. His current research interests focus on electrical drives, power electronics and nonlinear systems.
Dipl.-Ing. Julien Weckbrodt
University of Nantes, Nantes, Frankreich
Julien Weckbrodt received his Master degree in electronic engineering in 2016 from the Polytechnical Institute of Bordeaux, France (INP Bordeaux). More specifically, he studied integrated circuits, power electronics and radiofrequency at ENSEIRB-MATMECA engineering school. Since 2017, he works as a Ph.D. student for Safran Group. His research interests include energy conversion, power management, and power drive techniques for aeronautical applications.
Dipl.-Ing. Julian Felix Wölfle
University of Stuttgart, Stuttgart, Deutschland
Julian Wölfle is a reseach associate at the institute for power electronics and electrical drives (University of Stuttgart). His topic is on the incease of th lifetime of IGBT-power-modules.