05. - 07.06.2018
PCIM Europe 2018
Power Electronics | Intelligent Motion | Renewable Energy | Energy Management


Poster Session

Reliability Aspects


Wednesday, 06.06.2018, 15:15 - 17:30 hrs


J.A. Ferreira, Delft University of Technology, NL


15:15 Reliability Testing of SiC JBS Diodes for Harsh Environment Operation
Thomas Barbieri, Wolfspeed, Durham, USA
SiC devices are actively being designed into power conversion systems for outdoor applications. Today's system designers seek confidence in the dependability of these devices under high voltage, high humidity operation in these conditions. This work proposes a new test for reliability qualification. Newly released diodes from Wolfspeed, designed with additional environmental resistance, were built into modules and subjected to the new test by Vincotech to independently verify the reliability.
15:15 Mechanical Properties and Reliability of Pressureless Sintered Silver Materials for Power Devices
Dr.-Ing. Masafumi Takesue, Bando Chemical Industries, Kobe, Japan
This work shows that pressureless sintered silver has a good mechanical performance. The highest tensile strength in this study reached 145 MPa. The value is the best one in previous literature including pressure-assisted sintered silver materials. The broken faces of the sintered silver after tensile tests showed that nano/micro-sized particles were well sintered although it was pressureless sintering.
15:15 Control of Partial Discharge with High Temperature Insulating Polymer for High Voltage IGBT Module Application
Dr. Muhammad Morshed, Dynexsemiconductor, Lincoln, Grossbritannien
In order to ensure the longevity of power module, it is essential to maintain low partial discharge (PD) as it is the key degradation mechanism of encapsulating material in high voltage application. In this work, high temperature polyimides were used in the metallisation edges for impeding the PD. Adhesion promoters, coating thickness and void free coating near the metallisation edged of DBC substrate were considered for improving the PD performance.
15:15 Thermal Characteristics Evaluation of Wide Band Gap Power Devices
Prof. Shijo Nagao, Osaka University, Ibaraki, Japan
A series of thermal property measurement methods have been examined as the standard evaluation procedures for WBG devices. Three types of thermal measurements are under development. The first one is a measurement of heat conductivity and heat transfer by using a steady-state heat conductivity measurement method. The second is a measurement method by using a mimic device structure with heating element and temperature sensor on a WBG die. The third one is a transient heat transfer evaluation.
15:15 From Feasibility to SoP in a 6 Steps Process Described on a SiP Dc-Dc Buck Converter Powermodule
Florian Blum, Würth Elektronik eiSos, Garching b. München, Deutschland
The content of this poster is an example of 6 process steps. 1st step starts with the target specification. Continuing with 2nd called feasibility studies. Followed by the 3rd ,design. The 4th step will be first prototyping, followed by 5th, qualification and final test freeze. The 6th and last step is SoP and go to market phase. Several steps in this poster will be supported by analysis- and quality results.
15:15 H³TRB Test on 1.2kV SiC MOSFETs
Dipl.-Ing. Michael Hanf, University of Bremen, Bremen, Deutschland
We performed H³TRB testing of 1.2kV SiC MOSFETs in TO247 - housing, covered with silicone-gel.


Speaker detail

Dr. Thomas Barbieri
Thomas Barbieri
Wolfspeed, Durham, USA
Dr. Barbieri has over 10 years' experience in SiC semiconductor devices, including crystal growth, LEDs, and power devices. He has spent the past 4 and a half years as the product line marketing manager for Wolfspeed's SiC Schottky diode product line, promoting the existing portfolio and guiding the development of new products. This is Dr. Barbieri?s second paper at PCIM.
Herr Florian Blum
Florian Blum
Würth Elektronik eiSos, Garching b. München, Deutschland
Florian Blum, since 4 years Project owner and design engineer at Würth Elektronik eiSos Powermodule devision in Munich. More than 12 years expirience as application engineer in industrial, automotive, semiconductor and aerospace business.
Herr Michael Hanf
Dipl.-Ing. Michael Hanf
University of Bremen, Bremen, Deutschland
Sep. 2016 Dipl. Ing. electrical engineering, University of BremenSep. 2016 - Mar. 2017 Fraunhofer IWES, BremerhavenMar. 2017 - ... Institute for electrical drives, power electronics and devices, University of Bremen
Dr. Muhammad Morshed
Dynexsemiconductor, Lincoln, Grossbritannien
At present I am working at Dynexsemiconductor Ltd, UK as a Principal Engineer. My main role at Dynex is to improve the partial discharge of high voltage power mudule devices. I am working on palstic, encapsulation materials like gel, polyimide, parylene, resin and adhesive maetrials where I am developing the process to improve partial discharge of high voltage power module. I am also working to develop polymer matrix composite materials for high voltage insulation application.
Dr. Shijo Nagao
Prof. Shijo Nagao
Osaka University, Ibaraki, Japan
Shijo Nagao obtained a PhD in Physics from Kyushu University, Japan. After the post doctoral researches at Helsinki University of Technology, and at Norwegian University of Science and Technology, he moved to The institute of Scientific and Industrial Research, Osaka University, to join Prof. Suganuma's research group. The research target is development of materials in electronics, particularly for power electronics packaging.
Dr.-Ing. Masafumi Takesue
Bando Chemical Industries, Kobe, Japan
I have experienced synthesis of many kinds of nanoparticles over 15 years. I am now focusing on metallic nanoparticles for electronics. I received my doctral degree in engineering at Tohoku University in Japan.