05. - 07.06.2018
PCIM Europe 2018
Power Electronics | Intelligent Motion | Renewable Energy | Energy Management


Poster Session

Packaging Technologies


Wednesday, 06.06.2018, 15:15 - 17:30 hrs


Petar J. Grbovic, Huawei Technologies, D


15:15 Effect of Lead Frame Structure and Electrical Characteristic Comparison of IPM Module
Samuell Shin, ON Semiconductor, Bucheon-Si, Südkorea
This paper will discuss the role and importance of Lead-Frame in PKG as well as solutions that make it easier for designers to reduce wasted energy, lower component count and contribute to a greener world, and characteristics of SPM55 Module.
15:15 Development of 140X100 Footprint HV IGBT Module
Daohui Li, Dynex Semiconductor, Lincoln, Grossbritannien
New type of 3.3kV/450A half-bridge IGBT module is one of key standardised packages for future high voltage power electronics market. The EM-circuitry simulations have shown a very balance current at switching stage of module operation. The standardised packages can provide lower module level inductance and lower system stray inductance, and fit for common heat sink design for different voltage applications.
15:15 Performance Comparison Between Surface-Mount and Embedded Power Modules
M.Sc. Gerald Weis, AT&S Austria, Leoben, Deutschland
A comparison between state-of-the-art surface-mount build-ups and power switches embedded into the printed circuit board shows the high potential of integrated electronics. Measurements at defined operating point(s) verify improved thermal performance due to more heat spreading area, as well as higher achievable switching speed.
15:15 PCB-Embedding of Power Dies Using Pressed Metal Foam
Yoann Pascal, Satie, Paris, Frankreich
This paper presents a new technique to manufacture the top-side contact of a PCB-embedded power die, using a pressed piece of metal foam. The manufacturing process is detailed, simple prototypes are manufactured and electrically characterized, and the technique is used to embed a switching cell. This process is simple and highly cost-effective; the electric resistance of the assembly is close to that of a state-of-the-art industrial package using bond wires and the stray inductance is very low.
15:15 Direct Power Board Bonding Technology for 3D Power Module Package
M.Eng. Hidetoshi Ishibashi, Mitsubishi Electric, Fukuoka, Japan
Power module is used in a wide range of fields such as, home appliance, industry, railway, automobile, renewal energy etc. Recently, it is increasing to be required further compact, robust, and energy saving to power modules. This paper introduces the new package technology has the Power board (thicker copper printed circuit board) as inner connection instead of the conventional wire connection. This technology leads further compact, lower package stray inductance, and robustness to answer the market requirements
15:15 A Surface-Mountable 1.2 cc Compact Molded Package Suitable for 13 kV SiC MOSFET
Hisato Michikoshi, AIST, Tsukuba, Ibaraki, Japan
A surface-mountable 1.2 cc compact package suitable for 13 kV SiC MOSFET was successfully developed for pulsed power applications. To get a compact high-voltage-durable package, the authors applied the transfer molding technologies. The two factors presented were essential. The new package volume is roughly two order smaller than the previous studies'. The package healthily operated up to 18.4 kV peak without discharge, and verified its performance with 13 kV SIC MOSFET.
15:15 Particle Prevention During Ultrasonic Welding Process
M.Eng. David Guillon, ABB Switzerland, Lenzburg, Schweiz
Ultrasonic welding has been widely adopted in the Power semiconductor industry for the welding of terminals to metallized ceramic substrate. A primary challenge is to confine/clean the metal particles generated during the welding process.The concept of a particle prevention implemented in our LinPak design will be presented in this paper.
15:15 Asymmetrical Flyback Converter in High Density SMPS
Dipl.-Ing. Alfredo Medina Garcia, Infineon Technologies, Neubiberg, Deutschland
An 65W USB-PD high density adaptor (20W/cubic inch, cased), based on a single stage asymmetrical PWM flyback topology will be presented, Using MOSFETs, the achieved peak efficiency is close to 95% and the minimum of 93% at full load over input voltage


Speaker detail

Mr. David Guillon
M.Eng. David Guillon
ABB Switzerland, Lenzburg, Schweiz
Master degree in Material science at Polytech'engineering school of Montpellier
Starting working at ABB Corporate Research in Dättwil (Switzerland) involved in the ultrasonic welding project
Transferred in the ABB buisnnes unit Semiconductors, as project leader for new technology and product development
M.Eng. Hidetoshi Ishibashi
Mitsubishi Electric, Fukuoka, Japan
Hidetoshi Ishibashi studied Mechanical Engneering at the Saitama University and received the M.S in 2007.Since 2012 he has worked at Mitsubishi Electric Corporation in the field of power module packaging design and material development.
Daohui Li
Dynex Semiconductor, Lincoln, Grossbritannien
Obatined PhD degree from Queen Mary University of London in 2006, joined in Dynex in 2013, currently working as Module group manager in R&D Center, Dynex Semiconductor.
Dipl.-Ing. Alfredo Medina Garcia
Infineon Technologies, Neubiberg, Deutschland
Alfredo Medina Garcia received the M.Sc. degree in electronic engineering, M.Sc. degree in telecommunication engineering and B.Sc. degree in Industrial engineering. His main area of research is high efficient power converters with focus on high power density and new control algorithms. He currently works at Infineon Technologies AG, in the innovation department for power conversion.
Hisato Michikoshi
AIST, Tsukuba, Ibaraki, Japan
Hisato Michikoshi received the B.E. and M.E. degrees in materials science from Tohoku University, Japan in 1988 and 1990, respectively. Since 1990 he has been with Sumitomo Electric Industries, Ltd. He had been engaged in fiber-optics laser modules until 2011. Since 2014 he has been dispatched to National Institute of Advanced Industrial Science and Technology Japan to engage in development of SiC power devices and modules. His expertise is packaging enabling dynamic and thermal performance.
Mr. Yoann Pascal
Yoann Pascal
Satie, Paris, Frankreich
Y. Pascal received an Engineering degree in Electrical Engineering from École polytechnique (France) in 2015 and a M. Sc degree in Electric Power Engineering from the Royal Institute of Technology (Sweden) in 2016. He joined the SATIE laboratory for his Master Thesis in 2015 where he is currently working on his Ph.D. thesis. His current research interest includes DC-DC power conversion.
Samuell Shin
ON Semiconductor, Bucheon-Si, Südkorea
To seek power module development and application engineer position, based on the accumulated knowledge and technology from 8-years experience of power module development and customer support in the power semiconductor industry
M.Sc. Gerald Weis
AT&S Austria, Leoben, Deutschland
After Gerald Weis's graduation at the technical school in Kapfenberg, with focus on electronic, he studied electronic engineering and finished with a master degree at the University of Applied Sciences FH Joanneum Kapfenberg in 2012. From 2012 to 2017 he was employed as a researcher and development engineer at the university. In 2015 he started to work at AT&S Leoben within the business unit Advanced Packaging. He is also lecturer for electronic engineering, bachelor and master degree, at the University of Applied Science.