05. - 07.06.2018
Power Electronics | Intelligent Motion | Renewable Energy | Energy Management
SiC Power Modules
Tuesday, 05.06.2018, 15:15 - 17:30 hrs
Romeo Letor, STMicroelectronics, IT
Switching Behavior of SiC-MOSFETs in High Power Modules
To evaluate the switching behavior as well as switching losses in high power modules, a single chip 40 A SiC-MOSFET was tested with high commutating inductance. The single SiC-MOSFET need to slown down because of the increased oscillations and overvoltage during turn-off. To reduce these higher switching losses, new control concepts have been developed and tested.
The Challenges of Using SiC MOSFET-Based Power Modules for Solar Inverters
This paper examines SiC MOSFETs as a viable option for meeting the rising demand for faster switching and greater efficiency in 1500 V solar applications. It looks at their benefits - SiC MOSFETs enable deeper integration and greater power density - and their drawbacks in terms of switching performance and thermal conductivity in power module applications. The latest generations of devices' intrinsic properties appear to inhibit performance and reliability.
Low Inductive SiC Power Module Design Using Ceramic Multilayer Substrates
This paper presents the module design of a novel 600 V / 200 A full silicon carbide (SiC) half-bridge inverter module. The module is realized with a ceramic multilayer substrate which allows an ultra-low power loop stray inductance value of 1.3nH. Thermal simulations reveal that the thermal resistance is not increased by the multilayer design. Due to the heat spreading within the copper layers, the thermal influence of an additional ceramic layer can be compensated.
Very Low Stray Inductance, High Frequency 1200V_ 2 mOhms SiC MOSFET Phase Leg Module
This paper presents the characterization of a new 1200V / 2 mOhms Full SiC MOSFET phase leg module featuring a very low stray inductance within the standard 62 x 108 mm2 package. This module is built with an AlSiC base plate, AMB on Si3N4 substrates and the SiC MOSFET die are silver sintered for highest thermal performance and reliability. This 1200V/600A module achieves a parasitic inductance below 5 nH
Comparative Study of Full SiC Power Module in 1MHz, 600V, 50A Switching Operation
This paper develops 1200V, 50A full SiC half bridge power module, witch embeds C snubber and gate resistor. Embedded C snubber suppress surge voltage in fast switching operation, and gate resistors avoid parasitic gate oscillation of parallel connected SiC MOSFET in the module. 1MHz switching operation of developed module with 600V DC-Link voltage and 100A peak to peak load current is experimentally confirmed. In addition, two commercial power modules are applied with same test condition to evaluation developed power module.
3.3kV SiC Hybrid Module with High Power Next Core (HPnC) Package
Recently main requirements for power conversion system are further downsizing and higher efficiency. To satisfy these requirements, enhanced power density of power modules should be the key to succeed. In this paper, 3.3kV SiC-Hybrid module with High Power next Core package, which can realize lower switching loss than Silicone, has been described.
High Reliable 1700V Full SiC Power Module
1700V, 250A full SiC power module composed of Silicon Carbide (SiC) MOSFETs and SiC Schottky diodes has been launched. We utilized standard module package which is used in the market widely like as mass-produced ROHM's BSM300D12P2E001. Especially the 1700V full SiC module could pass over 1000 hours lifetime of HTRB and HV-H3TRB test. The ROHM's newly module has high reliability for usage in high humidity environment.
Analysis of 1200 V Si-SiC-Hybrid Switches for Resonant Applications
Hybrid switches consisting of a silicon IGBT and a silicon carbide MOSFET are a promising approach forpower loss reduction in resonant topologies. Potentials and performance are analysed and discussed indetail.
Simulation Based Design of SiC MOSFET Power Modules for EV/HEV Traction Inverter Applications with Test Validation
In this paper, we illustrate the process of SiC MOSFET half-bridge module design for inverter applications using simulation tools that address electrical and thermal performance concurrent with semiconductor device design. Validation of simulation results by testing a prototype inverter is reported. We conclude that this approach yields proper dimensioning of parallel devices while achieving efficiency and junction temperature targets based on projected device characteristics, leading to high performance, cost-effective module products.
Sintering Cu Paste Die-Attach for High TJ Power Devices
Metal sintering paste of Cu submicron/micron-particles is considered as a heat-resistant die-attach material for emerging wide bandgap power semiconductors, with its excellent electrical and thermal conductivity as well as its affordability. In the present work, a Cu particles paste was used for die-attach of SiC-MOSFET. The specimens of sintered Cu bonding structure were subjected to high temperature storage test, thermal shock test and power cycle test. Long?term reliability of the bonding was evaluated by die-shear strength test, phase analysis, microstructure observation, and electrical resistance.
Microsemi Power Module Products, Bruges, Frankreich
Development director at Microsemi Power Modules Products, Bruges, France. He holds an Engineer degree in Power Electronics (ENSERB) and has 32 years of experience in power conversion applications. He has in charge to design and develop standard and custom power modules. He has authored over 40 papers in international conferences or magazines.
ON Semiconductor, Ann Arbor, USA
Dr. Roy Davis serves since 2006 as applications manager for the Automotive MOSFETs and Wide Band Gap busines unit of the Power MOSFET Division of ON Semiconductor. Dr. Davis has over 30 years experience in automotive power electronics applications, and received the PhD in Mechanical Engineering from the University of Wisconsin - Madison and the MSE degree in Electrical Engineering from the University of Michigan.
Rohm, Kyoto, Japan
Kenji Hayashi received the M.Sc degree in 2006 from Keio University. He studied device technology in this university. Currently, he is in charge of development of Full SiC power module in Rohm corporation, Japan. He optimizes insulate technology by using new material and develops 1700 V full SiC power module that have high reliability for H3TRB, Thermal Temperature Test, Power Cycle Test and etc.
University of Applied Sciences Landshut, Landshut, Deutschland
Thomas Huber studied Electrical Engineering at the University of Applied Sciences Landshut, Germany. In 2015 he received the M.Eng title. The topic of his master thesis was the development of a traction inverter for an electrical formula student race car. Since that time he has been doing a cooperative doctorate at University of Applied Sciences Landshut at the group of Prof. Dr. Kleimaier and at Technical University of Munich at the institute of Prof. Dr. Kennel. Mr. Huber is doing research about novel low-inductive power module designs.
Fuji Electric Europe, Offenbach am Main, Deutschland
Lukas Kleingrothe received the M.Sc. degrees in mechatronics from the faculties of mechanical and electrical engineering of the University of Hannover, Germany, in January 2014. He is currently working in the technical department of the power semiconductor division of Fuji Electric with focus to power semiconductors in industrial applications.
Helmut-Schmidt University, Hamburg, Deutschland
Michael Meissner received the M. Sc. degree in International Mechatronics from the Technical University of Hamburg, Germany, in 2014. He is currently pursuing his doctorate at Helmut Schmidt University, Hamburg, Germany. His research interest includues the Si-SiC hybrid switch.
Osaka University, Ibaraki, Japan
Shijo Nagao obtained a PhD in Physics from Kyushu University, Japan. After the post doctoral researches at Helsinki University of Technology, and at Norwegian University of Science and Technology, he moved to The institute of Scientific and Industrial Research, Osaka University, to join Prof. Suganuma's research group. The research target is development of materials in electronics, particularly for power electronics packaging.
University of Rostock, Rostock, Deutschland
Florian Stoermer studied electrical engineering from 2009 to 2015 at the University of Rostock where he achieved his graduation Master of Science. Since November 2015 he has worked as research assistant at the institute of Electrical Power Engineering, University of Rostock. His research interests are the investigation of switching behaviour of SiC-MOSFETS.
Vincotech, Unterhaching, Deutschland
Matthias Tauer was working over 6 years as power electronics development engineer for solar inverter and dc/dc converter. Since 2016 he is responsible for the technical marketing at Vincotech. In this function he is investigating and benchmarking new device technologies and validationg their commercial benefits.