05. - 07.06.2018
PCIM Europe 2018
Power Electronics | Intelligent Motion | Renewable Energy | Energy Management


Poster Session

GaN Devices and Applications


Tuesday, 05.06.2018, 15:15 - 17:30 hrs


Chris Rexer, ON Semiconductor, USA


15:15 Application of GaN-GITs in a Single-Phase T-Type Inverter
M.Sc. Carsten Kuring, Technical University of Berlin, Berlin, Deutschland
Power electronics applying GaN semiconductors are promising high efficiency enabled through increased switching frequency and minimized switching losses. Fast switching demands for minimized stray inductances but contradicts the concept of the T-type inverter. While power semiconductors experience similar electrical stress inside the T-type and half-bridge topology, thermal performance is a limiting factor. Despite increased number of semiconductors in the T-type inverter an efficiency of appr. 99% is achieved at 150 kHz switching frequency.
15:15 S-Parameters Characterization of GaN HEMT Power Transistors for High Frequency Modeling
Ing. Loris Pace, University of Lille, Villeneuve d`Ascq, Frankreich
Gallium Nitride (GaN) power devices developed these recent years are ideal candidates for high frequency power conversion, leading to a reduction of size, cost and weight of power converters. The design of these converters is based on simulations which require developing accurate models over a wide frequency range. This paper presents a new characterization method of GaN power transistors based on the extraction of devices small-signal parameters up to the gigahertz range using 2-port S-parameters measurements and dedicated characterization fixtures on printed circuit boards (PCB).
15:15 650V E-Mode GaN HEMT Switching at 1MHz for Travel Adapter Application
Ann Starks, ON Semiconductor, Phoenix, USA
This paper presents the characteristics of the 650V Enhancement-mode gallium nitride (E-GaN) high-electron mobility transistor (HEMT) from ON Semiconductor Corporation. It demonstrates 1MHz frequency application in a travel adapter. A flyback converter topology is used in the travel adapter application. The driver circuit for 1MHz switching frequency for E-GaN HEMT is presented and experimental results show that high efficiency is achieved in the new design with the 650V E-GaN HEMT.
15:15 Power p-GaN HEMT Under Unclamped Inductive Switching Conditions
Ing. Juraj Marek, Slovak Technical University in Bratislava, Bratislava, Slowakei
In our work we present the results of Unclamped Inductive Switching (UIS) measurements of power GaN HEMTs comprised of p-GaN gates. Typical test waveforms and basic description of effects during discharging period of inductor are presented and discussed. It is experimentally confirmed that p-GaN HEMT devices exhibit even small intrinsic UIS capability that strongly depends also on driving circuit. Influence of different inductances as well as different supply voltage is also analyzed.
15:15 Designing High-Density Power Solutions with GaN
Paul Brohlin, Texas Instruments Inc, Parker, USA
Gallium nitride (GaN) once thought of as just a cool new power FET technology, is now changing the way power supply engineers are designing for density and efficiency. GaN-based solutions not only make power supplies faster, smaller and cooler, but also meet industry’s demand for ruggedness and system solution cost. This paper provides an in-depth insight into how GaN is making this possible, and is demonstrated with practical design examples.
15:15 Inverse Thermal Model of Temperature-to-Power Mapping for GaN Systems
Dr. Shuangfeng Zhang, University of Paris, PARIS, Frankreich
This paper deals with the problem of measurement of the losses in Power GaN chips due to the almost impossibility to measure the current under the penalty of adding parasitic inductances incompatible with the switching speeds of these components. For this purpose, this paper investigates the steady-state inverse heat conduction model (IHCM) developed from thermal simulations. The main objective is to derive the power dissipated in a GaN chip mounted on or in a PCB from the surface temperature measured by infrared thermography.
15:15 High Performance Thermal Solution for High Power GaN?FET Based Power Converters
Dr. Michael de Rooij, Efficient Power Conversion, El Segundo, USA
This paper explores a thermal cooling method suitable for small area eGaN FETs that eliminates mechanical stresses during assembly and yields excellent thermal performance using a liquid thermal interface material. A 140 V to 28 V Buck converter, capable of delivering 34 A (1kW) was designed and tested that resulted in nearly 5x increase in output current capability.
15:15 Wafer Level Embedding Technology for Packaging of Planar GaN Half-Bridge Module in High Power Density Conversion Applications
Dr.-Ing. Charles-Alix Manier, Fraunhofer Institute IZM, Berlin, Deutschland
A new fabrication process is presented for packaging of GaN bare devices in form of silicon-based packages using wafer level back-end processes. Compact planar half-bridge modules were fabricated at 200 mm wafer scale with 650 V rated single GaN bare die. The package demonstrates voltage breakdown up to 650 V with leakage current as low as 250 nA and thermal resistance RthJC of around 0.4 K/W. Implementation in power solutions has been first evaluated and results will be presented.
15:15 Monolithic GaN Power ICs Enable High Density High Frequency 3.2KW AC-DC Rectifier
M.Eng. Tom Ribarich, Navitas Semiconductor, El Segundo, USA
A 3.2KW 240VAC-to-48VDC high-density rectifier has been designed, built and tested. The topology selected includes an interleaved totem-pole power factor correction (PFC) front end, a resonant LLC step down converter, and a synchronous rectification (SR) output stage. The power train consists of GaN Power ICs with integrated gate drive operating at frequencies of 1MHz and has enabled an overall power density target of 70 W/in3. The prototype has reached peak efficiencies of 99% in the PFC stage and 98.3% in the LLC/SR stage.
15:15 Experimental Study on Gate Driver Influences to the 650V GaN E-HEMT
Yi Zhang, Huazhong University of Science and Technology / College of Electrical and Electronics Eng., Hubei Province, China
The high voltage 650V GaN E-HEMT shows potential to achieve higher efficiencies and higher switching frequencies than possible with silicon MOSFETs. This paper will study and comprise three different gate drives: isolated negative voltage gate drive (INGD), isolated zero voltage gate drive (IZGD), bootstrap gate drive (BSGD) for 650V GaN E-HEMT (GS66508P from GanSystems). The gate resistor influence, bead influence under different common source inductance and small dead time influence at small current are tested for three gate drives.


Speaker detail

Mr. Paul Brohlin
Paul Brohlin
Texas Instruments Inc, Parker, USA
Paul Brohlin is a Distinguished Member of Technical Staff and is currently the design engineering manager for GaN products and solutions at Texas Instruments.
Dr. Michael de Rooij
Dr. Michael de Rooij
Efficient Power Conversion, El Segundo, USA
Dr. Michael A. de Rooij is Vice President of Applications Engineering at EPC. Prior to EPC he worked at Windspire Energy developing small vertical-axis wind turbine inverters. Dr. de Rooij also worked as a Senior Engineer at the GE Global Research Center. He is a Senior Member of the IEEE and his research interests are solid-state HF converters, UPS, induction heating, PV, MRI, and semiconductor devices.
M.Sc. Carsten Kuring
Technical University of Berlin, Berlin, Deutschland
Carsten Kuring received the B.Eng. degree in electrical engineering from HTWK Leipzig in 2013 and M.Sc. degree in electrical engineering from Friedrich-Alexander University Erlangen Nuremburg in 2016. He is currently working at power electronics research group of Technical University of Berlin and his research in preparation of Ph.D. degree focuses on GaN power semiconductors.
Dr. Charles-Alix Manier
Dr.-Ing. Charles-Alix Manier
Fraunhofer Institute IZM, Berlin, Deutschland
Charles-Alix Manier received its Master degree from the Engineering school INSA-Lyon in France.He worked at the Federal Institute for Materials Research and Testing in Berlin and received his Phd degree from Technical University of Berlin in 2010.He has been with Fraunhofer IZM since 2010 as researcher working on metallic interconnects on flip chip and die bonding technologies (including reflow soldering, thermocompression, Transient Liquid Phase Bonding) in diverse fields of applications (i.a. MEMS, power electronics, medical).
Ing. Juraj Marek
Slovak Technical University in Bratislava, Bratislava, Slowakei
Dr. Juraj Marek, received his MSc. and PhD degrees in Electronics, both from Slovak Universityof Technology in Bratislava (STUBA), Slovakia, in 2007, and 2011, respectively. Since 2006 he isemployed as a researcher at Institute of Electronics and Photonics. His main areas of expertiseare oriented mainly to Si and GaN based semiconductor power devices characterization, TCADmodeling and simulation, and analysis of energetic capability - UIS test.
Mr. Loris Pace
Ing. Loris Pace
University of Lille, Villeneuve d`Ascq, Frankreich
Loris Pace received the Dipl.Ing. degree in electrical engineering from INSA Strasbourg, Strasbourg, France, in 2015. He worked first at the Ampère Laboratory, Lyon, France, in 2015 where he was involved in the characterization of optical SiC high-power thyristors using UV LEDs. Then he joined the laboratory of electrical engineering and power electronics (L2EP), Lille, France, in 2016 to start his PhD concerning the characterization and modeling of wide bandgap power devices for high frequency power converters design.
M.Eng. Tom Ribarich
Navitas Semiconductor, El Segundo, USA
25+ years working in Power Electronics IndustryExperience includes lighting and power supply applications and controllers40+ patentsNumerous conference papers and technical articlesCurrently Sr. Director of Engineer Systems at Navitas Semiconductor working on GaN Power ICs
Ms. Ann Starks
Ann Starks
ON Semiconductor, Phoenix, USA
Ann Starks is an Applications Engineer at ON Semiconductor. She has over ten years of experience in power electronics, specializing in low voltage dcdc converters, battery charging applications, acdc power supplies, and wireless charging. Ann has authored numerous publications, articles and conference papers over the years, has a patent to her name, and loves the innovative environment of the semiconductor industry.
Dr. Shuangfeng Zhang
University of Paris, PARIS, Frankreich
Shuangfeng ZHANG received her M.S. degree of Physics and Electrical Engineering from Paris-sud University, in 2015, respectively. She is currently a PhD student for Power Electronic Systems in laboratory GeePs (Group of electrical engineering, Paris). Her research interests include High-frequency high density power systems, GaN devices applications, modelling and thermal managements for power systems.
Mr. Yi Zhang
Yi Zhang
Huazhong University of Science and Technology / College of Electrical and Electronics Eng., Hubei Province, China
Yi Zhang received the B.S. degree in school of Electrical and Electronic Engineering from Huazhong University of Science and Technology, Wuhan, China, in 2016, where he is currently pursuing the M.S. degree.