05. - 07.06.2018
PCIM Europe 2018
Power Electronics | Intelligent Motion | Renewable Energy | Energy Management


Poster Session

SiC Devices


Tuesday, 05.06.2018, 15:15 - 17:30 hrs


Serge Bontemps, Microsemi PMP, F


15:15 Analog Based High Efficiency 2KW Totem Pole PFC Converter Using Surface Mount SIC MOSFET's
Jianwen Shao, Wolfspeed, Durham, USA
Implementation of a Low-cost totem pole power factor correction (PFC) converter using SiC MOSFETs is presented in this paper. First, a new current sensing scheme is presented which enables cost effective analog controllers to be used for totem pole PFC converters. Secondly, it has been implemented to design and test a 2KW totem pole PFC converter using Cree 900V, surface mount MOSFET.
15:15 Switching Pattern and Performance Characterization for "SiC+Si" Hybrid Switch
Haihong Qin, Nanjing University of Aeronautics and Astronautics, Nan jing, China
This paper presents the static and dynamic performance of paralleled 1.2kV SiC MOSFET
and 1.2kV SiC IGBT and compares them with a full Si IGBT and a full SiC MOSFET reference
devices having the same power ratings as for the hybrid samples. The hybrid parallel
connection aims to reach optimum power device performance by providing low static and
dynamic losses .Considering the different switching speeds and output characteristics of SiC
and Si devices in such hybrid structure, the sequence of switching should be controlled to
enable the Zero Voltage Switching (ZVS) for Si IGBTs. Test results are obtained to validate
this approach with respect to the static and dynamic performance.
15:15 Driver Integrated Fault-Tolerant Reconfiguration after Short-On Failures of a SiC MOSFET ANPC Inverter Phase
Dr.-Ing. Michael Gleißner, University of Bayreuth, Bayreuth, Deutschland
Fault-tolerant converters are required for applications with a high risk of damage or financial loss. The fault-tolerant ANPC inverter enables an ongoing degraded operation after single switch failures, if no secondary failures occur. This paper investigates the critical failure scenarios of a single-phase ANPC prototype built with 650 V SiC MOSFETs. Innovative driver integrated measures for immediate short-circuit detection, overvoltage clamping and switching strategy reconfiguration in order to enable a reliable ongoing operation are shown.
15:15 SiC Effect on Surge Voltage Distribution in Large Electrical Machines
M.Sc. Robert Maier, University of Bayreuth, Bayreuth, Deutschland
This paper investigates the impact of fast SiC switching transients on the voltage distribution of coil and winding voltages. The hardware under investigation is a stator with preformed coils and tapped windings. The rated power is in a range of 200 kW. The final paper will contain measurements that demonstrate the impact of varying rise times including feeding cable effects.
15:15 Junction Temperature Measurement of SiC MOSFETs: Straightforward as it Seems?
M.Sc. Tobias KESTLER, University of Bayreuth, Bayreuth, Deutschland
Reliable measurement of the junction temperature Tj is essential for the application of power semiconductors. Similar to the IGBT's Vce-method, for SiC MOSFETs the voltage drop over the body diode can be used for Tj acquisition. This method is validated for different devices with consideration of the gate voltage's and measuring current's influence. Furthermore the applicability of the Rgi-Method, which also works in switching operation, gets evaluated for SiC MOSFETS.
15:15 In-Depth Study of Short-Circuit Robustness and Protection of 1200V SiC MOSFETs
Dr. Xuning Zhang, Monolith Semiconductor, Round Rock, USA
This paper presents in-depth study of short circuit capability of 1200V SiC MOSFETs under different conditions with explanation and design trade-offs from both application and device stand point. Performance of different off the shelf gate drive ICs with de-sat protection functions are compared and short circuit protection in half bridge configuration are discussed. Finally, a gate drive design is demonstrated that can protect 1200V SiC MOSFETs under real life short circuit conditions.
15:15 Avalanche Rugged Low On-Resistance 1200V SiC MOSFETs With Excellent Long-Term Stability
Kwangwon Lee, ON Semiconductor, Incheon, Südkorea
1200V SiC MOSFETs with low on-resistance (Rsp=4.4mohm.cm2) were fabricated on 6 inch wafers and characterized to assess the device ruggedness and reliability. The wafer level unclamped inductive switching (UIS), negative bias threshold voltage stress, and high temperature reverse bias (HTRB) stress tests were conducted and good avalanche ruggedness statistics was shown and improved VTH stability during negative bias stress was found compared to three similarly rated commercially available SiC MOSFETs.
15:15 High Performance 4H-SiC MOSFETs with Optimum Design of Active Cell and Re-Oxidation Process
M.Eng. Toshikazu Tanioka, Mitsubishi Electric Corporation, Fukuoka, Japan
We present latest high performance 4H-SiC planar MOSFETs. By applying a cell structure with JFET doping, the newly designed 1200V class MOSFET has exhibited very low specific on-resistance (Ron,sp) of 3.0 mΩ·cm2 at 25 °C. We have also fabricated the high threshold voltage (Vth~4.9V) 600V class SiC-MOSFET with the optimized cell structure by using re-oxidation technique.
15:15 Derating of Parallel SiC MOSFETs Considering Switching Imbalances
Dipl.-Ing. Teresa Bertelshofer, University of Bayreuth, Bayreuth, Deutschland
This paper presents a numerical method to analyse the parallel connection of SiC MOSFET dies. The effect of asymmetries within the chips' parameters, especially the threshold voltage, is investigated. The investigation result quantifies, to what extent the PTC behaviour of the Ron can mitigate the overheating of one chip caused by switching loss imbalance. The results are used to define a necessary derating of the inverter output power, so that no single chip is thermally overstressed.
15:15 Commutation Characteristics During Switching of Hybrid SiC and Si Configurations
M.Sc. Michael Schütt, University of Rostock, Rostock, Deutschland
This paper presents the switching characteristics for hybrid configurations of SiC and Si switching devices. This work shows the effect of higher displacement currents on switching attributes due to higher blocking capacitance and shorter switching times of SiC elements. This paper studies the current commutation between the body diode of a SiC-MOSFET and a SiC-SBD during switching. Further, this work extends on the hybrid configuration of a Si-IGBT and a SiC-MOSFET with an antiparallel SiC-SBD.
15:15 Current Sharing During Unipolar and Bipolar Operation of SiC JBS Diodes
Thomas Barbieri, Wolfspeed, Durham, USA
Commercial SiC JBS diodes operate as unipolar devices under standard conditions, allowing for uniform current sharing and easy paralleling. Under transient surge conditions, these diodes can transition into bipolar operation, where uniform current sharing is not expected to occur. This work evaluates the non-uniform current sharing behavior of JBS diodes in parallel as they transitioned into bipolar mode. Recommendations are made for safe operating area for current surge in parallel diodes.
15:15 Ruggedness Behavior of SiC JBS Diodes and SiC MOSFET Body Diodes Under Extreme Short Circuit Conditions
Mehrdad Baghaie Yazdi, ON Semiconductor, Aschheim, Deutschland
In this paper we study the ruggedness of silicon carbide JBS Diodes and the Body Diodes of SiC MOSFETs under extreme surge currents conditions. For this a new kind of surge current tester has been designed capable of generating sinusoidal surge currents with pulse widths ranging from a few hundreds of nanoseconds to millisecond. The effect of such surge currents is investigated with resepct to the degredation and destruction point of various devices.


Speaker detail

Herr Mehrdad Baghaie Yazdi
Mehrdad Baghaie Yazdi
ON Semiconductor, Aschheim, Deutschland
Electrical and Electronic Engineering at the Technical University of Vienna.Dctoral study in Solid State Physics, at the Technical University of Darmstadt.Research assistant for Fraunhofer in the field of Adaptronic.Joined Fairchild 2013, part of Design and Technology Enablement Group. 2014 became the head of the Power Solution Center, a synergy Lab which worked across Business Units - Technology and Sales. As of September 2017 took responsibility as the Globabl Application Manager for the Wide Bandgap Business Unit at ON Semiconductor.
Dr. Thomas Barbieri
Thomas Barbieri
Wolfspeed, Durham, USA
Dr. Barbieri has over 10 years' experience in SiC semiconductor devices, including crystal growth, LEDs, and power devices. He has spent the past 4 and a half years as the product line marketing manager for Wolfspeed's SiC Schottky diode product line, promoting the existing portfolio and guiding the development of new products. This is Dr. Barbieri?s second paper at PCIM.
Frau Teresa Bertelshofer
Dipl.-Ing. Teresa Bertelshofer
University of Bayreuth, Bayreuth, Deutschland
Teresa Bertelshofer received the diploma from the University of Bayreuth in November 2014. Since December 2014 she is working as Research Assistant in the Department of Mechatronics at the University of Bayreuth. Her current research interests include automotive inverters and the application of Wide Bandgap power semiconductors.
Mr. Michael Gleißner
Dr.-Ing. Michael Gleißner
University of Bayreuth, Bayreuth, Deutschland
Michael Gleissner received the Diploma degree in electrical engineering and information technology from the University of Applied Sciences Ingolstadt in 2010 and the Ph.D. degree from the University Bayreuth in 2016. Currently he is working at the Department of Mechatronics, University of Bayreuth. His research interests include fault-tolerant power electronics, fault detection and isolation, failure behavior of semiconductors, and measures to increase the availability of power electronics.
Mr. Tobias KESTLER
M.Sc. Tobias KESTLER
University of Bayreuth, Bayreuth, Deutschland
Tobias Kestler received his master degree from the University of Bayreuth, Germany, in 2017. Since then he is a research assistant at the Department of Mechatronics at the same university. His research interests focus on the use of SiC MOSFETs for traction inverters and the associated aspects of thermal modelling and management.
Kwangwon Lee
ON Semiconductor, Incheon, Südkorea
Technology Development, Design Engineer
- 5 years and 6 months experience in South Korea (Jan. 2010 - June 2015), 650V Superjunction MOSFET (SuperFET2 / SuperFET3) simulation / design / development
- 1 year and 6 months experience in Sweden (July 2015 - Dec. 2016) 1200V SiC MOSFET simulation / development
- 10 months experience in South Korea (Jan. 2017 - Nov. 2017) 1200V SiC MOSFET simulation / development
Herr Robert Maier
M.Sc. Robert Maier
University of Bayreuth, Bayreuth, Deutschland
In 2014 Robert Maier achieved his graduation in the study of mechatronics as B.Sc. at the Friedrich-Alexander University Erlangen-Nürnberg. At the University of Bayreuth he continued his study of mechatronics whitch he graduated as M.Sc. in 2016. Since 2017 he is working as a scientific assistant at the Chair of Mechatronics at the University of Bayreuth. His main research topics are SiC switching characteristics and its impact on the electrical load in large traction drives.
Dr. Haihong Qin
Haihong Qin
Nanjing University of Aeronautics and Astronautics, Nan jing, China
Haihong Qin received the B.S. and M.S. Degrees in college of automation engineering from the Nanjing University of Aeronautics and Astronautics, Nanjing, China.
His research interests include wide band-gap devices and its application in motor drive.
Mr. Michael Schütt
M.Sc. Michael Schütt
University of Rostock, Rostock, Deutschland
Michael Schütt received the B.S. and M.Sc. degrees from the University of Rostock in 2012 and 2014, respectively. He worked at the University of Wisconsin-Madison for his Master Thesis on the topic Improving the Magnetic Flux Linkage-Based Power Loss Model for an HEV Boost Converter. He also stayed for one more year in Madison for postgraduate courses with the research group WEMPEC. Since 2015, he is working as a research assistant and doctoral candidate at the University of Rostock.
Mr. Jianwen Shao
Jianwen Shao
Wolfspeed, Durham, USA
Jianwen received his M.S. degree in Electrical Engineering from Virginia Tech, US in 2000 and Tsinghua University, China in 1995. He has many years? experience as applications engineer in power semiconductor industry. He was with STMicroelectronics from year 2000 to 2017. Currently Jianwen is leading Wolfspeed?s applications group for SiC power devices applications.
Mr. Toshikazu Tanioka
M.Eng. Toshikazu Tanioka
Mitsubishi Electric Corporation, Fukuoka, Japan
Toshikazu received the M.S. degree in Electronics and Materials Physics from Osaka University, Osaka, Japan, in 2007
Since joining Mitsubishi Electric Corporation, Japan, in 2007, he has been engaged in the development of SiC-MOSFETs.
Dr. Xuning Zhang
Dr. Xuning Zhang
Monolith Semiconductor, Round Rock, USA
Dr. Xuning Zhang received his Bachelor's and Master's degree in electrical engineering from Tsinghua University. He received his PhD degree from CPES- Virginia Tech in 2014. After graduation, he joined CPES as a research scientist. He joined Monolith Semiconductor Inc. as a principal application engineer in 2016.His research interest includes SiC device design and implementation, Driving circuit design, high-efficiency high power density converter design, EMI modeling and filter optimization.