05. - 07.06.2018
PCIM Europe 2018
Power Electronics | Intelligent Motion | Renewable Energy | Energy Management


Poster Session



Tuesday, 05.06.2018, 15:15 - 17:30 hrs


Gourab Majumdar, Mitsubishi Electric, J


15:15 A New MOSFET Intelligent Power Module for Low Power Motor Drive Applications
M.Eng. Jaewook Lee, Infineon Technologies Power Semitech, Seoul, Südkorea
This paper introduces a new MOSFET CIPOSTM (Control Integrated Power System) Mini which is the IPM (Intelligent Power Module) that integrates 650V rated CoolMOSTM MOSFETs with fast body diode, a SOI (Silicon On Insulator) gate driver with 6 channels and protection circuit in a DIL (Dual-in-line) fullpack package with transfer molded type. Especially, this module offers high efficiency under the low power motor drive application such as refrigerator in home appliances. This paper provides an overall description of the new MOSFET IPM.
15:15 High Voltage Semiconductor Switch on the Base Of RCRSD for Bipolar Power Current Pulse Commutation
Dipl.-Ing. (FH) Alexey Grishanin, Electrovipryamitel, Saransk, Mordovia, Russische Föderation
The paper presents development results of new semiconductor device - reverse conducting reverse switched dynistor RCRSD and high effective discharge switch for bipolar power current pulse commutation on the base of this device. It was found by experimental investigation of RCRSD that it is capable to commutate bidirectional current pulses in hundreds MW range. Power loss in RCRSD during reverse current pulse commutation is 2-fold lower than that in RSD.
15:15 IGCT Switching Behaviour Under Low Current Conditions
M.Sc. Dragan Stamenkovic, EPFL, Lausanne, Schweiz
Given the typical operating conditions and the design practices, IGCT manufacturers have paid little attention to the switch’s behaviour under low load and this information is mostly absent in the datasheets. Low current turn-off of the IGCT is explored throughout this paper, supported by TCAD simulations and test results from a dedicated test setup. Initial tests show the extended duration of the turn-off process as the turn-off current decreases, which must be taken into account during design.
15:15 LV100 High Voltage Dual Package in Paralleling Operation
M.Eng. Ryo Tsuda, Mitsubishi Electric Europe, Ratingen, Deutschland
MITSUBISHI ELECTRIC has announced LV100-package [1] [2]. This new package is considered as standard for traction application suitable for using with Si and SiC chips. To achieve inverter scalability, LV100-package also focuses on parallel connection. The paralleled modules influence the inverter performance due to required derating. Besides external boundary conditions, like DC-link bus bar and gate driver, the electrical module parameters themselves have strong impact on the inverter derating. Therefore, this paper analyzes the influence the electrical parameters, in particular the diode parameters, on the required module derating. Furthermore, an outlook on paralleling future SiC-based diodes is given.
15:15 MOSFET Technologies for Auxiliary DC-DC Converters
Dr. Filippo Scrimizzi, STMicroelectronics, Catania, Italien
ST High Voltage and Low Voltage MOSFET technologies (DM6 and F7) represent the best solution for primary side switches and synchronous rectifiers in bi-directional auxiliary DC-DC converters widly used in EV/HEV market, optimizing the system design and enhancing the overall performance.
15:15 SuperJunction Power Device Evolution: Characteristics Analysis and Performance Comparison of MDmesh? M2 and MDmesh? M6 Technologies
Dr. Antonino Gaito, STMicroelectronics, Catania, Italien
Each power application has its own requirements and optimization criteria which are reflected in the available technologies paired with innovative package solutions. It is very difficult, if not even impossible, to fulfill at the same time driving factors like efficiency, power density, EMI, layout parasitic elements, commutation behavior and cost so it is necessary to lead different technologies and solutions. But the advantages of introducing a new technology may not emerge if you do not adopt both circuitry and layout design criteria that take into account the peculiarity of the new devices. Particular attention must be paid when increasing switching speeds because intrinsic differences between capacities and how they interact with parasitic components of the circuit can lead to undesired results. The purpose of the work is to highlight the main characteristic that differentiate the two SJ technologies, as the well-known M2 and the new comer M6, suggesting the guidelines that allow you to choose the one that best fit the application needs.
15:15 Dynamic Current Sharing and Gate Feedback During Turn-OFF of Paralleled IGBTs
Robin Schrader, University of Rostock, Rostock, Deutschland
Current redistributions occur during turn-OFF of paralleled IGBTs. This effect has been observedby measurements and simulations before. Though, this paper explains the physicalredistribution mechanism in detail. The process of this redistributions is defined by the electronand hole currents in the IGBTs, their gate- and collector-emitter voltages and by their influenceon each other. The redistributions end, when the collector-emitter voltages reach the dc-linkvoltage.
15:15 Evaluation of Miller Capacitance Depending on Drain-Source Voltage When SJ HV Power MOSFETs are in Reverse Mode
Ing. Carmelo Parisi, STMicroelectronics, Catania, Italien
When we consider Super Junction devices and it was experimentally observed that Crss does not decrease monotonic by increasing Vds. This paper studies this phenomenon introducing a simplified mathematical model which explains the Crss behaviour in SJ power MOSFETs.
15:15 Characterization of Voltage Divergence in Series Connected SiC Trench MOSFETs and Si IGBTs
M.Sc. Zarina Davletzhanova, University of Warwick, Coventry, Grossbritannien
Series connected power devices are required for voltage sharing in HV applications like grid connected converters and dc circuit breakers. The impact of power device technology on voltage sharing in series devices is important to enable snubberless operation via active gate control. This paper investigates voltage sharing in series connected devices by comparing SiC trench MOSFETs and Si IGBTs. Measurements and FE models have been used for evaluating the impact of electrothermal variation (temperature and switching rate) on voltage imbalance
15:15 SiC and Silicon MOSFET Solution for High Frequency DCAC Converters
Dr. Luigi Abbatelli, STMicroelectronics, Catania, Italien
Multichannel Voltage Source DC/AC Inverter are used to supply heater elements such as IR Halogen Lamps to be integrated in the Power Architecture of oncoming 3D Printers. A comparison with silicon device's state of art is made: electrical and thermal performances of three main transistors families (650V SiC MOSFET devices, 650V Silicon MOSFET and 650V Silicon IGBTs) are evaluated where the new 650V SiC MOSFET is in used as switch in the inverter high frequency leg and the 650V silicon MOSFETs/IGBTs are in used in the line frequency leg.
15:15 Short Circuit Robustness Improvement by FEM Simulation on IGBT
Dr.-Phys. Daniela Cavallaro, STMicroelectronics s.r.l., Catania, Italien
A Finite Element Model has been used to simulate the thermal behavior of a HV IGBT during a Short Circuit Test (SCT) using front and back metal “cooling” solutions. The purpose is to evaluate by simulations if the proposed solution can improve the robustness of the device during the SCT. The electrical simulation conditions have been experimentally obtained by reproducing in laboratory the failure of the power sample device during the SCT.
15:15 A New Combined VGE and VCE Based Short-Circuit Detection for High-IC,desat HV-IGBTs and RC-IGBTs
M.Sc. Julian da Cunha, University of Rostock, Rostock, Deutschland
Measurements are made to validate a already proposed 1-D gate-emitter voltage based short-circuit (SC) detection and enhancements leading to a new 2-D UGE and UCE based detection method are being proposed and validated.Different HV-IGBT driver setups will further be compared in respect to their SC-detectionmethods ability to protect low conduction loss optimized HV-IGBTs from destructionin the event of a fault as well as to measure the current direction through the module for RC-IGBT applications.


Speaker detail

Mr. Luigi Abbatelli
Dr. Luigi Abbatelli
STMicroelectronics, Catania, Italien
Luigi Abbatelli received the Electronic Engineering Degree in April 2006 and two months after he joined ST. He started his career as Application Engineer for Power Bipolars and IGBTs applications with strong focus on SMPS and Induction Heating. Today he?s mainly focused on Photovoltaic and Electric Vehicles applications as well as on the latest SiC technologies.
Dr. Daniela Cavallaro
Dr.-Phys. Daniela Cavallaro
STMicroelectronics s.r.l., Catania, Italien
Daniela Cavallaro received her degree in Physics from the University of Catania (Catania, Italy) in 1999. Since 2000, she has been working for STMicroelectronics (Catania, Italy) in the Power Transistor Division, where she has been involved in the design of several ICs. Her current research interests include characterization and physics-based modeling of active and passive devices for switching applications. She has been the author and coauthor of several articles published in international journals and specialized newspapers.
Mr. Julian da Cunha
M.Sc. Julian da Cunha
University of Rostock, Rostock, Deutschland
Mr. da Cunha has finished his M.Sc. in electrical engineering at the university of Rostock in the field of power electronics and works as Phd student at the university of Rostock
Ms. Zarina Davletzhanova
M.Sc. Zarina Davletzhanova
University of Warwick, Coventry, Grossbritannien
Zarina Davletzhanova received the M.Sc. degree in engineering systems from the University of Warwick, U.K., in 2012, where she is currently pursuing the Ph.D. degree in power electronics. Her current research interests include condition monitoring, reliability, power devices in multilevel converters, and applications.
Mr. Antonino Gaito
Dr. Antonino Gaito
STMicroelectronics, Catania, Italien
Antonino Gaito is an Application and Market Development Manager working in Stmicroelectronics. He received his Electronic Engineering Degree in 2001. He joined STMicroelectronics in 2002. He started his work experience in the Applications Power Bipolar laboratory as Application Engineer and after eight years, he moved to the Applications and Market Development team. He's mainly focused on high-frequency power conversion and on the DC/DC converter at high efficiency especially for sectors like Servers and chargers
Dipl.-Ing. (FH) Alexey Grishanin
Electrovipryamitel, Saransk, Mordovia, Russische Föderation
Alexey Grishanin received the E.Eng. degree from Mordovia State University, Saransk, Russia, in 2004. After graduation, he works at the Scientific and Engineering Center for Power Semiconductor Devices of PJSC Electrovipryamitel. He is the head of department development of bipolar power semiconductors since 2011. Scientific interests include power semiconductor devices (ETT and LTT for phase control, reverse-switching dynistors and thyristors for pulse applications),
Mr. Jaewook Lee
M.Eng. Jaewook Lee
Infineon Technologies Power Semitech, Seoul, Südkorea
Jaewook Lee was born in Ulsan, Korea, in 1988. He received the B.S. and M.S. degree in electrical engineering from the University of Myong-Ji, Yong-in, Korea, in 2012 and in 2014, respectively. In 2015, he joined the Infineon Technologies Power Semitech, Korea, where he has been working on an R&D engineer handling IPM(Intelligent Power Modules) for motor drive system.
Dr. Carmelo Parisi
Ing. Carmelo Parisi
STMicroelectronics, Catania, Italien
Carmelo Parisi received a degree in Electronic Engineering in 2001 from the University of Messina. He joined ST in 2002 as Technical Marketer. Since 2010 he is System Solution Application Dev. Manager for Motor Control in the Power Transistor Division. His main fields of interest are the power conversion for appliance and industrial field, the power switch as IGBT, MOSFET and Intelligent Power Module and Power Module for which he is even product designer.
Robin Schrader
University of Rostock, Rostock, Deutschland
Robin Schrader studied electrical engineering from 2010 to 2016 at the Technische Universität Braunschweig where he achieved his graduation Master of Science. Since October 2016 he has worked as a research assistant at the Institute for Electrical Power Engineering, University of Rostock. His research interests are high voltage IGBTs.
Mr. Filippo Scrimizzi
Dr. Filippo Scrimizzi
STMicroelectronics, Catania, Italien
I have worked in ST since 2000 at the beginning as product engineer. In 2003 I moved in marketing and application team for supporting automotive customer in EABU in ST office in Munich. In 2005 I came back to Catania for leading the application team for LV MOSFET. Since end of 2016 I'm leading the automotive application team supporting every kind of product my division is selling in this market: IGBTs and HV and LV MOSFETs.
M.Sc. Dragan Stamenkovic
EPFL, Lausanne, Schweiz
Dragan Stamenkovic received his Dipl.Ing. (2008) and M.Sc. (2010) degrees in electrical engineering from the University of Belgrade, Serbia. In 2011, he joined GE Global Research, Munich as a power electronics development engineer with focus on wind turbine converters and later continued his career with GE Power Conversion, Berlin in the area of medium voltage drives. Currently, he is pursuing the Ph.D. degree at Power Electronics Laboratory at EPFL, Lausanne, Switzerland, with the main focus on high power converters for MVDC applications.
Mr. Ryo Tsuda
M.Eng. Ryo Tsuda
Mitsubishi Electric Europe, Ratingen, Deutschland
Ryo Tsuda has received the M.E. degree in Electrical and Electronic Engineering from the Oita University, Japan in 2010. Subsequently, he has joined Mitsubishi Electric Corporation in Japan, where he has been developing SiC high voltage power modules. Since 2017, he is with Mitsubishi Electric Europe working as an application engineer for high voltage power modules - in particular for 3.3 kV SiC modules.