05. - 07.06.2018
PCIM Europe 2018
Power Electronics | Intelligent Motion | Renewable Energy | Energy Management


Oral Session

Advanced Sensors


Thursday, 07.06.2018, 14:00 - 15:40 hrs




Eric Favre, IMI Precision Engineering, CH


14:00 Closed-Loop Hall Sensors with Near Fluxgate Performance for Residual Current Measurement in Photovoltaic Systems
M.Sc. Stéphan Trombert, LEM International SA, Plan-les-Ouates, Schweiz
Closed-loop fluxgate sensors are widely used to measure small residual currents flowing in large and noisy common mode currents. Their accuracy and ability to provide high galvanic isolation make them the "preferred choice" for residual current measurement (RCM), but with the penalty of a costly and physically large design. This paper describes an innovative, reduced foot print, closed-loop sensor for residual current measurement in photovoltaic (PV) systems based on Hall technology.
14:25 Evaluation of Overall Accuracy of New Current Sensing Concepts in Comparison to State-of-the-Art Methods
M.Sc. Frank Lautner, University of Bayreuth, Bayreuth, Deutschland
This paper investigates the overall accuracy of conventional current sensors and compares it to new low cost solutions. It was found that a typical bandwidth of 30 kHz, which can be reached in open loop Hall effect sensors, leads to errors that exceed datasheet stationary accuracy by far at high motor speeds. Alternative methods, like VCE(on)-based sensing, with higher bandwidth but suffering from poorer stationary accuracy, are found to reach comparable overall accuracy and are hence promising.
14:50 Design and Implementation of an Integrated Current Sensor for a Gallium Nitride Half-Bridge
M.Sc. Janes Walter, Universtiy of Stuttgart, Stuttgart, Deutschland
This work presents the design and implementation of a Printed Circuit Board integrated, inductive current sensor for short-circuit protection of a Gallium Nitride half-bridge. The sensor geometry was optimized numerically for high bandwidth, low additional inductance and low capacitive coupling. The fabricated sensor was measured in the frequency and time domains, showing very good agreement with the simulated results and also in comparison with a reference coaxial shunt.
15:15 Utilization of Parasitic Luminescence from Power Semiconductor Devices for Current Sensing
M.Sc. Jonathan Winkler, Robert Bosch, Reutlingen, Deutschland
In contrast to common current sensing methods where the sensing element must be added, a potential alternative current measurement method based on intrinsic semiconductor properties, namely electroluminescence from power semiconductor devices, is presented.A novel approach for the implementation of a dead time control, as well as a promising conceptual study on luminescence-based current sensing is presented.


Speaker detail

Mr. Frank Lautner
M.Sc. Frank Lautner
University of Bayreuth, Bayreuth, Deutschland
From 2011 until 2017 Frank Lautner studied engineering science and energy technology at the University of Bayreuth, Germany. After receiving his M.Sc. degree in 2017 he now works as a research assistant with the chair of mechatronics, centre of energy technology, University of Bayreuth. His research interests concentrate on alternative current measurement approaches.
M.Sc. Stéphan Trombert
LEM International SA, Plan-les-Ouates, Schweiz
Stephan Trombert received the M. Sc. degree in electrical engineering and computing from Coventry University, Coventry, England in 1992. After 22 years in the power electronics industry, he joined LEM SWITZERLAND SA, Geneva, Switzerland (world leader for isolated AC/DC current measurements) in 2014 to design current transducers.
Mr. Janes Walter
M.Sc. Janes Walter
Universtiy of Stuttgart, Stuttgart, Deutschland
Janes Walter received the B.Eng. in electrical engineering at the dual university Baden-Württemberg 2015 and is expected to finish his M.Sc. in electrical engineering at the University of Stuttgart in October 2017.
He currently researches short-circuit behavior of wide-bandgap transistors and therefore suitable short-circuit detection methods at the Institute for Robust Power Semiconductor Systems.
Herr Jonathan Winkler
M.Sc. Jonathan Winkler
Robert Bosch, Reutlingen, Deutschland
Jonathan Winkler received his Bachelor of Engineering degree from University of Applied Science Esslingen in 2014. He continued his studies at the Robert Bosch Center for Power Electronics and received the Master of Science degree from Reutlingen University in 2016. Since 2017 he has been working as PhD Student at Robert Bosch GmbH for the department of power semiconductors and modules. His PhD program is in cooperation with the Institute of Robust Power Semiconductor Systems (ILH) at the University of Stuttgart.