05. - 07.06.2018
PCIM Europe 2018
Power Electronics | Intelligent Motion | Renewable Energy | Energy Management


Oral Session

GaN Devices


Thursday, 07.06.2018, 14:00 - 15:40 hrs


Brüssel 1


Elison Matioli, POWERlab, EPFL, CH


14:00 High Power Nanosecond Pulse Laser Driver Using an eGaN®FET
Dr. John Glaser, Efficient Power Conversion, El Segundo, USA
This work describes a laser driver using commercial GaN FETs to achieve a high power, high speed pulse laser driver capable of operating from an 80 V bus, and can generate current pulses into a laser diode of 60 A peak current with a 5 ns duration.
14:25 Very High Current Wire Bondable and Embeddable GaN E-HEMT Devices for High Power Applications
Larry Spaziani, GaN Systems, Ottawa, Kanada
Gallium nitride transistors have ideal characteristics for high power uses such as traction inverters and power modules but have not previously been available with higher than 100A rating. This paper shall demonstrate the new generation of GaN E-HEMT devices and their applicability towards high power solutions, being almost ideal to parallel. Test results in die and module forms, including double pulse tests, switching energy and device characteristics will be presented.
14:50 6.78 MHz Multi Amplifier and Transmit Coil eGaN® FET based Class-E Wireless Power System Evaluation
Dr. Michael de Rooij, Efficient Power Conversion, El Segundo, USA
A large area wireless power architecture using multiple high Zout class E amplifiers driving partially overlapped coils is presented. Experimentation shows that high Zout amplifiers inherently isolate from each to balance load sharing for receivers that straddle across two or more coils. Only eGaN FET based class E amplifiers can simultaneously achieve high efficiency and high output impedance making them ideal for this application.
15:15 Towards Highly-Integrated High-Voltage Multi-MHz GaN-on-Si Power ICs and Modules
M.Sc. Stefan Moench, Fraunhofer IAF, Freiburg, Deutschland
This work discusses integration and packaging approaches using 600 V GaN-on-Si technology. The influence of a common conductive Si substrate on circuit performance is investigated. A 300 V dc-dc converter (97 % efficiency) is built to compare separately source-connected and common semi-floating substrate terminations of the high-/low-side circuits. Operation of a GaN-based half-bridge with integrated gate-driver on a common substrate is demonstrated, emulating a fully-integrated solution.


Speaker detail

Dr. Michael de Rooij
Dr. Michael de Rooij
Efficient Power Conversion, El Segundo, USA
Dr. Michael A. de Rooij is Vice President of Applications Engineering at EPC. Prior to EPC he worked at Windspire Energy developing small vertical-axis wind turbine inverters. Dr. de Rooij also worked as a Senior Engineer at the GE Global Research Center. He is a Senior Member of the IEEE and his research interests are solid-state HF converters, UPS, induction heating, PV, MRI, and semiconductor devices.
Dr. John Glaser
Efficient Power Conversion, El Segundo, USA
John Glaser received his BSEE from University of Illinois and his MSEE and Ph.D. from University of Arizona. From 1998 to 2014, he worked at General Electric Global Research on power electronics for commercial, medical, industrial and aerospace applications. In 2014, he joined EPC as Director of Applications, where he develops applications, circuits, and methods to maximize the benefit of GaN power transistors. He has published more than 30 papers and has been granted 36 US patents, and is an IEEE Senior Member.
Herr Stefan Moench
M.Sc. Stefan Moench
Fraunhofer IAF, Freiburg, Deutschland
Stefan Moench received his M.Sc. in electrical engineering in 2014 from the University of Stuttgart, Germany, where he afterwards worked as a research assistant at the Institute of Robust Power Semiconductor Systems as part of the Robert Bosch Center for Power Electronics. Currently he is at the Fraunhofer Institute for Applied Solid State Physics, Germany. His research interests include highly-integrated, highly-efficient and fast-switching power electronics for applications such as electromobility and renewable energy conversion.
Mr. Larry Spaziani
Larry Spaziani
GaN Systems, Ottawa, Kanada
Larry Spaziani is GaN Systems VP Sales and Marketing. He was previously with International Rectifier, where he was responsible for managing its new product development team and forging relationships with external business partners and technology leaders. He has a strong track record at executive management level in the semiconductor industry working for companies such as Unitrode and Texas Instruments, where he was responsible for off-line and isolated power products.