05. - 07.06.2018
Power Electronics | Intelligent Motion | Renewable Energy | Energy Management
Reverse Conducting IGBT's
Thursday, 07.06.2018, 10:00 - 12:05 hrs
Munaf Rahimo, ABB Switzerland, CH
Short-Circuit Behavior of 6.5 kV RC-IGBT
This paper presents measurements of the short-circuit behavior of 6.5 kV high power Reverse Conducting IGBT (RC-IGBT). Differences between short-circuit types I-IV are investigated for RC-IGBT and compared with conventional IGBT. The results are discussed concerning the optimized gate-drive pulse pattern for RC-IGBT usage.
New Transfer Mold SMD Type IPM with Integrated RC-IGBT, Bootstrap Diode and Capacitor
A new transfer mold SMD type IPM developed for small capacity motor drive in home appliance products that compact size and high reliability are pursued is presented in this paper. By utilizing new packaging technology and thin wafer RC-IGBT the new SMD type IPM successfully incorporated not only 3-phase IGBT bridge and gate-driver ICs but also BSDs and Bootstrap Capacitors (BSCs) into a very compact surface mount type package that can dramatically minimize overall size and complexity of the inverter drive system.
The Series of 7th-Generation "X Series" RC-IGBT Modules for Industrial Applications
We describe the series of our newly 7th-Generation "X Series" RC-IGBT Modules for Industrial Applications.
4.5kV Rupture Resistant Press Pack IEGT
A 4.5kV class Press Pack IEGT (PPI) with an improved rupture resistance is presented. That capability is not only achieved by increasing the thickness of the ceramic package, but also by optimizing the parts inside the package. The rupture resistance of the new package could achieve 13.3 MA2sec which is 1.7 times of that of the conventional package.
New Low Loss Phase Control Thyristors for Medium Current UHVDC Transmission
The presented new generation of 8.5 kV class Phase Control Thyristors (PCTs) in package with 119 mm pole piece features reduced ON-state voltage VT through optimized wafer thickness, resistivity and cathode design. Additionally, dV/dt and tq ratings were improved as well in the whole range of VT/Qrr values relevant for HVDC and industrial applications. This device completes the new generation PCT platform of ABB with rating currents of 1.5, 3 and 6 kA.
Toshiba, Nomi-shi, Japan
Raita Kotani received the M.S. degree in science from the University of Tokyo in 2013. He is currently with Toshiba Electronic Devices & Storage Corporation, Japan. He works on the development of high-voltage IGBT modules for railway vehicles and electrical grid.
ABB Switzerland, Lenzburg, Schweiz
Sascha Populoh studied physics with the focus on solid state physics at the Technical University of Braunschweig, Germany, where he graduated in 2006. He was awarded a Marie Curie Fellowship by the European Union to carry out his PhD work at the Université Paris Sud in Orsay, France. He received his PhD in 2009 and continued to work as project leader at Swiss Federal Laboratories for Materials Science and Technology. In 2015 he joined Bipolar R&D at ABB semiconductors in Lenzburg, Switzerland, where he is developing Diodes and PCTs.
Mitsubishi Electric Corporation, Fukuoka, Japan
Yazhe Wang has over 12 years of experience in the design and manufacturing of transfer mold type IPM products.He has a MS in Electrical Engineering from Shanghai University China.Yazhe is currently working for Mitsubishi Electric Corporation, Power Device Works as senior technical marketing managerin the DIPIPM design department. He has eight journal publications, and has 2 registered patents in Japan, US and China.
University of Rostock, Rostock, Deutschland
Mr. Winekce started studying Electrical Engineering in October 2007 at the University of Rostock. In March 2011 he received his B.Sc. degree followed by the M.Sc. degree in October 2012. Since November 2012 he is a Researcher at the University of Rostock working on his Ph.D.-Thesis.
Fuji Electric, Matsumoto, Nagano, Japan
Akio Yamano received the B. Sc. and M. Sc. degree in physics from Osaka University, Japan, in 2008 and 2010. In April 2010, he joined Fuji Electric Co., Ltd. Between 2013 to 2015, he was a guest scientist at RWTH Aachen University, Germany, to make a study of Power Electronics. Since joining Fuji Electric Co., Ltd., he has been engaged in the design and development of power device, IGBT module and application technologies. His research interests include the designing of power device and IGBT module.