05. - 07.06.2018
Power Electronics | Intelligent Motion | Renewable Energy | Energy Management
Power Modules & Smart Driver
Thursday, 07.06.2018, 10:00 - 12:05 hrs
Uwe Scheuermann, Semikron Elektronik, D
Impact of Load Profiles on Power Module Design - a Detailed Analysis Based on 7th Generation of IGBT and Diode Technology
The interaction in-between load profile and power-module lifetime is analyzed. Major differences in temperature ripples and distribution are highlighted and consequences for the power module are derived. Based on an exemplarily chosen system, the resulting power-module lifetime is concluded. It is demonstrated that, with respect to the application demands, temporary overload operation at high junction temperatures is sufficient and continuous operation at, e.g., 175 °C does not provide any additional advantage.
A Novel Insulation Technology for Gate Drivers
This paper describes a novel isolation technique and explores the qualification process for the revolutionary lead-frame-based coreless Pulse Transformer used in integrated circuit-based gate driver.
Directly Cooled HybridPACK Power Modules with Ribbon Bonded Cooling Structures
In this paper a new way of direct fluid cooling for power modules is introduced to the market that gives an alternative to the pin fin base plates fabricated with MIM (Metal injection molding) or forging technologies.The new cooling concept uses flat base plates (nickel plated copper base plates) and ribbon bonded cooling structures. It is very flexible and offers a fast implementation of customer specific design with an optimized thermal performance being comparable with results from conventional pin fin base plates.
Enhanced Module Design with DPD Technology
This paper introduces 'Direct Pressed Die' (DPD) technology, starting from the well-known SKiiP pressure contact technology and showing how it is possible to further exploit the pressure contact concept. The elimination of wire bonds, introduced with SKiN technology in 2011, enables the possibility to press where it is mostly needed: directly onto chips. This grants an excellent thermal resistance without rigid connection between substrate and heatsink or baseplate, just a thin deposition of thermal interface material.
Direct 2-Way Coupled Electro-Thermal Simulation of Temperature and Current Distribution in Power Devices
Thermal measurements based on the VCE(T)-method only deliver an area related average temperature of the devices with no information about Tmax. For realistic identification of hot spots coupled thermo-electrical simulations must be applied. We introduce a method of direct coupled thermo-electrical simulation in ANSYS, which takes into account the temperature depended current distribution given by the VF(IF,Tj)-characteristic of the device as well as the impact of parasitic resistances along the current paths of paralleled devices.
Semikron, Nürnberg, Deutschland
Roberto Bellu (IT)Graduate in Electrical Engineering at Turin Polytechnic, served at Semikron Italy in technical and management positions. Since 2014 joined Semikron Headquarters in Nuernberg as Technical Assistant of the CEO. His experience includes Design and Manufacturing of Power Electronic devices; Design, Manufacturing, Installation, Commissioning for Photovoltaic Industry.
Infineon Technologies, Warstein, Deutschland
Stefan Buschhorn studied physics at the universities of Göttingen and Uppsala and finished with a thesis on bulk metallic glasses. He completed his research activities at the Ruhr-University Bochum with a doctoral thesis on magnetization dynamics. Working at Infineon Technologies AG, Warstein, Germany, since 2012, his focus is on the interplay between power modules and related components in the different applications, and the mutual implications of design, technologies, and operating conditions.
Power Integrations, Ense, Deutschland
Karsten Fink received his degree in Electrical Engineering and a PhD from TU Berlin (Germany). Since 2000 he had the opportunity to make experiences in several R&D and Engineering positions designing converter systems for Traction, Wind power, Photovoltaics, Medium Voltage Drives , Grid tied converters and Battery storage. Since 2014 he is working in application engineer at the Gate Drivers department of Power Integrations in Ense (Germany).
SEMIKRON Elektronik GmbH & Co. KG, Nürnberg, Deutschland
Dr. M. Montaine received her doctorate in Condensed Matter Physics in 2008 from Altai State Technical University, Russia. She worked from 2009 till 2012 as a postdoctoral researcher in Institute for Multiscale Simulation, University of Erlangen-Nuremberg. She joined a simulation group of R&D department of Semikron Elektronik in 2012. Her main activities concern the modeling and thermo-electro-mechanical FEM analysis of power semiconductors and power electronic systems.
Infineon Technologies AG, Warstein, Deutschland
Study of Physics : 2001-2007PhD Studen 2007- 2010 ( Elmos AG in cooperation with University of Duisburg-Essen) Receive of Phd title: 2011I am with Infineon since 2010 as Innovation management with focus on:New Electrial concepts and power module design/ Innovative interconncetion and joining technologies /new materials.