05. - 07.06.2018
PCIM Europe 2018
Power Electronics | Intelligent Motion | Renewable Energy | Energy Management


Oral Session

Reliability SiC Devices


Thursday, 07.06.2018, 10:00 - 12:05 hrs


Brüssel 1


Josef Lutz, Chemnitz University of Technology, D


10:00 Practical Aspects and Body Diode Robustness of a 1200V SiC Trench MOSFET
Dr. Thomas Basler, Infineon Technologies, Neubiberg, Deutschland
The paper investigates differences between IGBT and SiC trench MOSFET and physical aspects which go hand in hand with new devices, e.g. the more pronounced short channel effect or the VGS(th) hysteresis. The impact on device characteristics is explained and the robustness of the device under short circuit and body diode surge current and commutation SOA is shown.
10:25 High Dynamic Stress on SiC Trench MOSFET Body Diodes and their Behaviour
M.Sc. Andreas März, University of Bayreuth, Bayreuth, Deutschland
Nominated for the Best Paper Award
Nominated for the Young Engineer Award

This paper investigates state-of-the-art SiC trench MOSFET body diodes under high dynamic stress and during reverse-recovery in parallel configuration. Measurements on SiC MOSFET body diodes under high dynamic stress show the effect of a clamping of the drain-source-voltage together with a measurable of increase of the charge during reverse-recovery.
10:50 Reliability and Ruggedness of SiC Trench MOSFETs for Long-Term Applications in Humid Environment
Dipl.-Ing. (TH) Ingo Voss, Infineon Technologies, Neubiberg, Deutschland
SiC Trench MOSFETs are planned to be used in long-term outdoor applications like solar and drives. This means that the reliability of SiC Trench MOSFETs has to be ensured and verified by extended standard reliability tests and application relevant tests. In this paper, the performed tests and the results after stress are presented. The results show that the investigated SiC Trench MOSFET has a high reliability of gate oxide and can withstand humidity and operate under short-circuit condition.
11:15 Investigation on Reliability of SiC MOSFET Under Long-Term Extreme Operating Conditions
Dr.-Ing. Tien Anh Nguyen, SATIE Laboratory, Cachan, Frankreich
To reproduce the aging state of power semiconductor devices for real operating conditions, the aging process under long-term extreme operating condition (short circuit, unclamped inductive switching) was performed. The study focuses on discrete SiC MOSFET. We measure different aging indicators during aging process. The results highlight a similar evolution of these indicators measured in both stresses. A small increase of gate leakage current (900fA) was detected before failure. This leakage current is related to the degradation of oxide layer.
11:40 High Humidity, High Temperature and High Voltage Reverse Bias - A Relevant Test for Industrial Applications
M.Sc. Joni Jormanainen, ABB Drives Oy, Helsinki, Finnland
The importance of the High Humidity, High Temperature and High Voltage Reverse Bias test (H3TRB-HVDC) for semiconductor reliability is shown in this paper. Results from different devices and manufacturers are presented. The conditions used in the tester are T=85° rH=85% and stress voltage 80% of the rated value. H3TRB-HVDC should become a common test for SiC semiconductor suppliers as humidity ruggedness of power devices is an essential feature for industrial applications.


Speaker detail

Dr. Thomas Basler
Dr. Thomas Basler
Infineon Technologies, Neubiberg, Deutschland
Thomas Basler received his Diploma in Electrical Engineering from Chemnitz University of Technology in 2009. His Diploma thesis was on the robustness of power diodes. Between 2009 and 2013 he was a member of the scientific staff at the Chair of Power Electronics and Electromagnetic Compatibility at Chemnitz University of Technology. At the beginning of 2014 he received his PhD. His thesis is about short-circuit and surge-current ruggedness of IGBTs and was supervised by Prof. Dr. Josef Lutz. 2014 he joined Infineon Technologies AG, Neubiberg, Germany, where he works on the development of SiC MOSFETs, diodes and Si IGBTs.
Mr. Joni Jormanainen
M.Sc. Joni Jormanainen
ABB Drives Oy, Helsinki, Finnland
Joni Jormanainen received his M.Sc degree in electronics and electrical engineering from Aalto University, Espoo, Finland, in 2017. He is currently working as a reliability engineer at ABB Drives Oy in Helsinki. His current research interest include physics of failure in electronics and power electronics.
Mr. Andreas März
M.Sc. Andreas März
University of Bayreuth, Bayreuth, Deutschland
Andreas Maerz recieved his Master degree from the University of Erlangen in 2012.
From 1999 to 2011 he was an Application Engineer in the Rail Systems Division of Siemens in Erlangen.
Since September 2012 he is working as Research Assistant at the University of Bayreuth.
His current research interests include power conversion systems and power semiconductors.
Dr. Tien Anh Nguyen
Dr.-Ing. Tien Anh Nguyen
SATIE Laboratory, Cachan, Frankreich
Tien Anh Nguyen received the Engineering degree in electric power system from Hanoi University of Science and Technology, Hanoi, Vietnam, in 2008, and the M.S. degree in electrical engineering and the Ph.D. degree from École Normale Supérieure Paris-Saclay, France, in 2009 and 2013, respectively. He is currently postdoctoral researcher in SATIE laboratory, France. His current research interests include reliability of power semiconductor devices and instrumentation.
Herr Ingo Voss
Dipl.-Ing. (TH) Ingo Voss
Infineon Technologies, Neubiberg, Deutschland
Ingo Voss studied Electrical Engineering at RWTH Aachen University, Germany, where he received his Diploma degree. Between 2000 and 2005 he was research associate at the Institute for Power Electronics and Electrical Drives (ISEA). At the beginning of 2006 he joined Infineon Technologies AG, Neubiberg, Germany, where he worked 10 years as application engineer for hybrid and electrical vehicles. Since 2015 he works in the quality management department where he is responsible for the qualification of SiC products for industrial applications.