05. - 07.06.2018
PCIM Europe 2018
Power Electronics | Intelligent Motion | Renewable Energy | Energy Management


Oral Session

SiC Devices II


Wednesday, 06.06.2018, 14:00 - 15:15 hrs


Brüssel 1


Nando Kaminski, University of Bremen, D


14:00 Beyond the Datasheet: Commercialization of 700 V - 1.7 kV SiC Devices with Exceptional Ruggedness for Automotive & Industrial Applications
Dr. Avinash Kashyap, Microsemi, Bend, USA
This paper will discuss (a) Microsemi's approach to create widespread adoption of SiC devices via rapid commercialization, and (b) key ruggedness metrics based on industry feedback that is not commonly presented in either datasheets or qual standards, but can potentially unearth underlying device and package weaknesses undermining reliable long-term operation.
14:25 6.5 kV Full SiC Power Module with HV100 Package
M.Eng. Junichi Nakashima, Mitsubishi Electric, Hyogo, Japan
Mitsubishi Electric has developed 6.5 kV Full SiC power module with HV100 standardized package and all mounted devices are SiC devices. These devices are the SBD-embedded SiC-MOSFETs. Embedding SBDs within the SiC-MOSFET can suppress bipolar degradation and reduce recovery current of the body diode in the MOSFET. In addition, we optimized an internal structure of the HV100 package, and achieved stable electrical characteristics.
14:50 Is an Antiparallel SiC-Schottky Diode Necessary? Calorimetric Analysis of SiC-MOSFETs Switching Behavior
Dipl.-Ing. (FH) Otto Kreutzer, Fraunhofer Institute IISB, Erlangen, Deutschland
Within this paper the switching losses of a Wolfspeed 25mOhm bare die SiC-MOSFET are measured in a hard switching 800 V DCDC-converter with five different commutation partners. A small and a large SiC Schottky diode, an SiC-MOSFET body diode and a combination of body and Schottky diode are compared at different switching speeds and switching currents. The results show quite well the reverse recovery charge dependence of SiC-MOSFET?s body diode on switching speed.


Speaker detail

Dr. Avinash Kashyap
Dr. Avinash Kashyap
Microsemi, Bend, USA
Avinash Kashyap is the Director of SiC Technology at Microsemi Corp, responsible for the execution of various critical wide bandgap programs and shaping future business strategy in this space. He has authored over two dozen peer-reviewed publications and has over 14 patents granted or pending. Dr. Kashyap has earned a Doctorate in electrical engg. from the University of Arkansas, Fayetteville and is a senior member of the IEEE.
Herr Otto Kreutzer
Dipl.-Ing. (FH) Otto Kreutzer
Fraunhofer Institute IISB, Erlangen, Deutschland
Otto Kreutzer graduated from Landshut University of Applied Sciences in 2011 and is since then working at Fraunhofer IISB on high power density and efficiency of SiC HV-DCDC-converters. During his studies he was working for BMW in Germany and South Africa. In 2015 he was honored with the Semikron innovation award for a DCDC-converter with a power density of 140 kW/dm³. At the AFRICON 2017 he was honored with the outstanding paper award for a DCDC-converter with an efficiency of 99.7%.
M.Eng. Junichi Nakashima
Mitsubishi Electric, Hyogo, Japan
Junichi Nakashima studied the Semiconductor device modeling and received his Master degree from Hiroshima University in 2012. He is currently working in the Mitsubishi Electric Corporation, Japan, as a researcher of power modules. He is optimizing the SiC power modules by utilizing simulators (for example, electromagnetic field analysis, circuit analysis with device modeling, thermal analysis) and by analyzing measurement data of modules.