05. - 07.06.2018
Power Electronics | Intelligent Motion | Renewable Energy | Energy Management
Wednesday, 06.06.2018, 10:00 - 12:05 hrs
Mark M. Bakran, University of Bayreuth, D
IGBT Power Stage Delay Calibration is Minimizing Current Imbalance in Large Power Modules with Isolated Multiply Segmented Paralleled Half Bridges
The paper comprises an overview about the utilized IGBT driver methods to drive multiply paralleled power stages like IGBT modules. Typical drawbacks of the approaches found in practice and the logical conclusion to propose a totally delay matched and low jitter configuration that allows clustering of up to 12 individual power blades by individually digitally tuned gate drivers. The measurement of existing standard solutions and the results of the described totally matched approach is shown and the corresponding topologies and experimental switching test results are presented in this paper.
Performance Comparison Between Voltage Source and Current Source Gate Drive Systems
This paper presents the comparison of two gate driver boards, which are operated with the same power module. One solution is realized using a gate current control driver IC, while the other solution uses a conventional gate driver IC with external buffer. The power module is a 1200 A / 1200 V module designed for high power applications. The functionality of both boards is analysed and the switching performance is compared.
High-Side Driver Supply With Reduced Coupling Capacitance
The capacitive coupling of high-side driver circuits is in the range of the output capacitance of new semiconductors. To reduce the negative impact of the capacitive coupling, in particular common mode currents into the heatsink, a new gate drive supply circuitry is presented, discussed and verified with laboratory measurements. Moreover, the impact on the inductor design is being discussed, including a description of further optimization potentials.
An Isolated Voltage-Source Integrated SiC Gate Driver IC with a Slew Rate Adjusting for Gate-Resistance-Free
This work presents a novel galvanic isolated gate driver IC, which drives a SiC power device by itself without any isolated voltage source, buffer ICs and gate resistances due to its internal wireless signal power transmission and slew rate adjusting function. The fabricated compact gate driver with a 5 V power supply successfully drives a 120 A SiC power device stably up to 30 kHz. This demonstrates a new technique to drive a SiC power device without negative gate bias at off-state by eliminating the gate inductance.
A Gate Driver Approach using Inductive Feedback to Decrease the Turn-on Losses of Power Transistors
A novel gate driver approach for power transistors is introduced, allowing to decrease the turn-on losses of power transistors. The decrease in turn-on switching losses is possible through a transformer, which couples energy from the power current path to the control current path.Measurements of a 650V silicon superjunction MOSFET show a turn-on energy reduction of up to 30 %.
Technical University Dortmund, Dortmund, Deutschland
Michael Ebli received his M.Sc. degree from Reutlingen University in 2013. He has been with the Robert Bosch Center for Power Electronics, Reutlingen University, since 2013. His current research interests include the improvement of power electronic systems modeling.
Infineon Technologies, Neubiberg, Deutschland
Mr. Frank reached the degree of Diplom-Ingenieur at University of Technology Munich in 1995 and PhD at Federal Armed Forces University in 2000. He works in power electronics since 1994.Dr. Frank started at Infineon in 2000 as concept engineer for PFC and switch mode power supply control IC. He held several positions in discrete power semiconductors, IPMs and gate driver ICs since 2003. He is the owner of several patents and inventions.
Leibniz University Hannover, Hannover, Deutschland
Jens Friebe is a power electronics engineer at the Inverter Systems Technology Department at SMA Solar Technology AG since 2009. He holds a M.Sc. and a Ph.D. degree in electrical engineering from the University of Kassel. He worked on PV-Inverter topologies, wide-bandgap semiconductors, magnetic components and control strategies for high switching frequencies. Currently he works on power electronics packaging concepts for PV-Inverters in the power range from 1kW to 5kW.
Panasonic Corporation, Moriguchi City, Osaka 570, Japan
YASUFUMI KAWAI received the B.S and M.S. degrees in science from Kobe University, Kobe, Japan, in 2004 and 2006, respectively. He joined Panasonic Corporation, Osaka, Japan, in 2006, where he started the development of GaAs MMIC in a millimeter wave. Since 2012, he has been engaged in research and development of III-nitriade-based MMIC.
SEMIKRON Elektronik, Nürnberg, Deutschland
Sven Teuber studied Mechatronics with a major in power electronics at the Friedrich-Alexander University in Erlangen and received his diploma in 2010. He joined Semikron in the same year and changed to his current position in the R&D department in 2011. Since then he is involved in the development of intelligent power modules, IGBT-gate-drivers and power electronic stacks. His special focus is on the integration of new concepts and technologies, also in the context of funded research projects.