05. - 07.06.2018
PCIM Europe 2018
Power Electronics | Intelligent Motion | Renewable Energy | Energy Management


Oral Session

High Power IGBT Devices


Wednesday, 06.06.2018, 10:00 - 12:05 hrs


Brüssel 1


Katsuaki Saito, Hitachi Power Semiconductor Device, J


10:00 New 6.5kV 1000A IGBT Module with Side Gate HiGT
Hiroyuki Koguchi, Hitachi Power Semiconductor Device, Hitachi-shi, Ibaraki, Japan
Nominated for the Young Engineer Award

New 6.5kV 1000A IGBT module was developed. A side-gate HiGT (High Conductivity IGBT), which has small Cres and fine pattern cell, is applied to this module. It realizes that 10% lower Eon+Err and 10% lower Vce(sat) against our conventional planar gate HiGT module. Package concept is same with our 3.3kV and 4.5kV FH version IGBT modules [2]. Thermal resistance Rth(j-c)diode is decreased by 20%, and the internal stray inductance is decreased by 29%. As a result of inverter loss simulation, the output current of the new module can be increased by 33% from the conventional module at 100Hz-1kHz.
10:25 Plasma-induced Diode Short-Circuit in Neutral-Point-Clamped Converters
M.Sc. David Hammes, University of Rostock, Rostock, Deutschland
Nominated for the Best Paper Award
Nominated for the Young Engineer Award

Some HV-IGBTs or diodes in a Neutral-Point-Clamped (NPC) converter can be switched off without taking blocking voltage. Therefore, plasma remains inside these semiconductors and will be removed via charge carrier recombination, taking over blocking voltage or a short-circuit event. The last one is yet described for the IGBT, but not for the diode. The presented investigations within this paper examine the origin, the possible influences and failure cases of this new kind of short circuit.
10:50 The third generation 6.5kV HiPak2 module rated at 1000A and 150°C
Dipl.-Ing. Charalampos Papadopoulos, ABB Switzerland, Lenzburg, Schweiz
This paper includes the improvement of 6.5kV IGBT and Diode chipset for 150°C operation and increase of current capability in inverter and rectifier mode.
The focus of the paper is to show how thin increase in temperature and current could be achieved and in the end finalized with full module dataset of the final design.
11:15 Design and Development of an Integrated Power Module Used in Low Voltage DC/AC Hybrid Circuit Breaker
M.Eng. Kenan Askan, Eaton Industries, Wien, Österreich
This paper reports on the design and development work of an integrated power module (IPM) used in an Hybrid Circuit Breaker (HCB) application. Two previously characterized power insulated-gate bipolar transistors (IGBTs) and silicon diode bare dies, together with control electronics, are placed on both sides of an Al2O3 substrate. This allows the smallest footprint with the highest current density, and the fastest current commutation to be integrated into a standard miniature circuit breaker (MCB) housing. An experimental setup is developed to analyze the surge current capability of the technology and to design the most appropriate technology with the highest reliability and most compact power module.
11:40 New 1200 V IGBT and Diode Technology with Improved Controllability for Superior Performance in Drives Application
Dr. Christian Müller, Infineon Technologies, Warstein, Deutschland
1200 V IGBT and diode technology optimized for drives application are presented. The IGBT structure is based on micro-pattern trenches with sub-micron mesas which provide strongly reduced static losses and offer a high level of controllability. For the diode, an improved performance with significantly reduced oscillatory behavior is achieved. In power modules, higher current density and larger output currents are reached due to the superior performance of IGBT and diode.


Speaker detail

M.Eng. Kenan Askan
Eaton Industries, Wien, Österreich
Kenan Askan acquired his engineering degree in electrical engineering with major in power electronics and electrical machinery at Istanbul Technical University (2002-2008). He is currently master student at Technical University of Vienna. He has 10 years’ experience in R&D at different area of industrial applications of power electronics. He has been working at Eaton Industries as a senior engineer in area of technology research for semiconductor based power switching since October 2014.
Herr David Hammes
M.Sc. David Hammes
University of Rostock, Rostock, Deutschland
David Hammes has studied Master of Applied Research at the Ostbayerische Technische Hochschule Regensburg, Germany. He received his M.Sc. degree in Electrical Engineering in 2015. He now works at the University of Rostock for the chair of Power Electronics and Electrical Drives. His research interest include high voltage semiconductors, devices and multi-level converters.
Mr. Hiroyuki Koguchi
Hiroyuki Koguchi
Hitachi Power Semiconductor Device, Hitachi-shi, Ibaraki, Japan
Hiroyuki Koguchi received the M.E. degree from Ibaraki University, Japan, in 2009. In the same year, he joined Hitachi, Ltd. Since 2013, he is working at Hitachi Power Semiconductor Device, Ltd. He is engaged in design of high voltage IGBT module.
Dr. Christian Müller
Dr. Christian Müller
Infineon Technologies, Warstein, Deutschland
Christian R. Müller received the Engineer's degree in electrical engineering from the University of Applied Sciences Würzburg?Schweinfurt, Schweinfurt, in 2004 and the Ph.D. degree in physics from the University of Würzburg, Würzburg, Germany, in 2009.
In 2010 he joined the Infineon Technologies AG, Warstein, Germany, where he is working on the development of power modules with focus on the integration and utilization of fast-switching devices for applications with blocking voltages up to 1700 V.
Dipl.-Ing. Charalampos Papadopoulos
ABB Switzerland, Lenzburg, Schweiz
2010 Dipl. Ing electrical engineer in the University of Stuttgart
2011 Application engineer
2013 R&D engineer IGBT & Diode development
2015 till today Senior R&D engineer IGBT & Diode development