05. - 07.06.2018
Nuremberg
PCIM Europe 2018
Power Electronics | Intelligent Motion | Renewable Energy | Energy Management

 
 
 

Company profile
TH Proton-Electrotex, JSC

Contact data

TH Proton-Electrotex, JSC
Leskova 19
302040 Orel
Russian Federation

Phone: +7-4862-440456
Fax: +7-4862-440445
marketing@proton-electrotex.com
http://www.proton-electrotex.com

About us

Proton-Electrotex is financially independent company and one of the Russian leaders in development, production of IGBT modules, power semiconductor diodes, thyristors, modules, heatsinks to them and as well power units for application in different electric energy converters. The main Goal of our company is to provide customers with modern and reliable products.The Head office and main production areas of the Company are situated in the city of Orel, which is 360 km South of Moscow. In 2010 in Moscow the Research and Development Center was founded.
The main products of the Company are IGBT modules, power modules, rectifier, avalanche, fast diodes, PCT and fast thyristors which are produced in stud, disk and module design.
The production of semiconductor elements is based on two technologies – alloying technology and more advanced sintering technology.
All the devices can be mounted on air cooling heatsinks according to the requirement of the customer.

Product groups

Products

Devices in stud design
Thyristors and Diodes in stud design. Main characteristics: Mean on-state and forward currents up to 500A; Blocking voltage up to 1800V; Pressure contact construction; Simple mounting; High resistance to cyclic load; Diodes can be supplied with direct and reverse polarity; Metric and inch thread.
Devices in disc design
Thyristors and diodes in disc design. Main Characteristics: Mean on-state and forward currents up to 7100 A; Blocking voltage up to 6500 V; High resistance to the cyclic load due to pressure construction; Height of housing - 14, 20, 26, 35 mm; Diameter of semiconductor element - 24, 32, 40, 56, 70, 80, 90, 100 mm.
Devices in module design
Thyristor Modules and Diode Modules. Main Characteristics: Mean on-state and forward currents up to 1250 A. Blocking voltage up to 6500 V; Dimension of module copper baseplates 34*94 (housing F); 50*115 (housing C1); 70*104 (housing E1); 60*124 (housing A2); 77*150 (housing D); Single-sided cooling through copper base plate; Simple of mounting; High resistance to cyclic load due to pressure contact construction; Electrical isolated baseplate; Isolation voltage 3,0 kV AC per 1 minute or 3,6 kV DC per 1 second; Single and double components module; Modules of A2, F, D, E1 types are certified by UL standart.
Medium power IGBT modules
Main characteristics: copper baseplate + DBC Al2O3; Ultrasonically welded power terminals; Improved thermal cycling; RoHS compliant


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