05. - 07.06.2018
Nuremberg
PCIM Europe 2018
Power Electronics | Intelligent Motion | Renewable Energy | Energy Management

 
 
 

Company profile
ABB Switzerland Ltd. - Semiconductors

Contact data

ABB Switzerland Ltd. - Semiconductors
Fabrikstr. 3
5600 Lenzburg
Switzerland

Phone: +41-58586-1633
Fax: +41-58586-1306
abbsem@ch.abb.com
http://www.abb.com/semiconductors

About us

ABB is a leading supplier of power semiconductors with more than 100 years of experience in power electronics. We offer a full range of bipolar and IGBT power semiconductors for industrial, traction, power generation & distribution and renewable energy markets and applications.
Investments:
The recent investments in the production capacity expansion in Lenzburg, Switzerland, and Prague, Czech Republic, as well as in a new research laboratory for next generation high-power semiconductors in Baden-Dättwil, Switzerland, continue ABB’s success story in power electronics which began in 1913 when BBC started with the production of mercury-arc rectifiers in Switzerland.
Cleanroom:
During the power semiconductor manufacturing process contamination of various kinds may lead to a damage of the device and thus, render it unusable. In order to reduce this risk, power semiconductors are manufactured in cleanrooms, where a number of measures are taken to protect the silicon from contamination. T

Product groups

Products

TSPT+ 3300V 1800A HiPak
With the TSPT+ technology ABB has combined the merits of the Enhanced Planar cell with Trench technology and created the TSPT+ 3300V 1800A HiPak. The new TSPT+ represents the latest generation IGBT cell technology, enabling a further loss reduction and hence the possibility to increase the current density. The TSPT+ 3300V 1800A HiPak allows an increase in rated current of 20 percent compared to the previous 1500A generation in the same HiPak2 housing. In addition it is designed to cope with increased stray inductance values.
SPT++ 6500 V 1000A HiPak
The improved SPT++ technology boosts the rating of the 6500 V IGBT from 750 to 1000 A. In addition it allows the IGBT module to be operated up to Tvj (op) (operating junction temperature) = 150 °C with unrivaled robustness. For improved performance in regenerative mode ABB has increased the diode area by 20 percent. This opens the potential to choose a smaller module size or eliminate parallel connection of modules.


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