New Materials for Power Electronics
Yvonne Löwer, Heraeus Materials Singapore, SGP
Martin Schulz, Infineon Technologies, D
Manfred Goetz, Curamik Electronics, D
Andre Uhlemann, Infineon Technologies, D
Eric Vanlathem, Dow Corning, B
Chairman: Eric Carroll, EIC Consultancy, F
|10:00||Novel silver contact material for applications on DCB|
Yvonne Löwer, Heraeus Materials Singapore, SGP; Thomas Krebs, Susanne Duch, Sebastian Fritzsche, Wolfgang Schmitt; Heraeus Materials Technology, D
Power semiconductor devices are used for controlling and converting electrical energy and are used today in a wide range of applications. The constantly growing demand of higher performance, lower cost and higher reliability raises the need for further material development. The challenge of increasing power density is addressed by the development of novel interconnect materials, the mAgic sinter glue and paste. These materials offer efficient heat transfer as well as high temperature stability.
|10:30||Optimizing Thermal Interface Material for the Specific Needs of Power Electronics|
Martin Schulz, Infineon Technologies; Wilhelm Pohl, Hala Contec, D; Scott T. Allen, Henkel, USA
Development and formulation of a pre-applied phase change compound for Infineon IGBT power modules suitable for use in harsh environments.
Silicon Nitride Substrates for Power Electronics
|A new base plate concept on the basis of aluminium-copper clad materials|
Andre Uhlemann, Alexander Herbrandt, Infineon Technologies, D
Power electronic applications for hybrid as well as for electric vehicles often based on liquid water cooling system in order to optimize the power density and keep the system compact. In this paper, we present a new concept for an IGBT cooling plate, based on a new Aluminum-copper clad substrate with copper on the top for soldering and a structured lower side for cooling.
|12:00||New Generation of Silicone Gels for Power Devices Encapsulation|
Eric Vanlathem, Dow Corning, B; Hiroji Enami, Dow Corning Toray, J; D.S. Hyun, Dow Corning Corporation, USA
Advances in Silicon technology for IGBT chips and recent progress made in the field of Wide Band Gap Semiconductors, principally SiC, are pushing temperature limits for packaging materials to the extreme of what existing materials can afford. A set of new silicone gels has been developed and evaluated following a three steps approach: with step one, optimization of existing toolbox of silicone chemistry brings silicone gels capable to withstand 200°C with step two, a new approach was necessary in order to boost thermal performances, up to a temperature of 225°C with step three targeting temperatures at or above 250°C, an out-of-the-box concept is being followed, with new silicon-based polymers being designed.