Conference

A High Accuracy Test System of Power MOSFET
Song Qingliang, Huawei Technologies, China
Jin Zhaoguo, Huawei Technologies, China

Parameters of power MOSFET such as parasitical capacitors, transfer characteristic,output characteristic and threshold voltage have a giant effect on the MOSFET application and simulation. The paper presents a high accuracy test system from an enginee ring point of view. The accuracy of the system is verified through the contrast of datasheet, MOSFET vendor testing results and the novel test system results, and also verified through the contrast of simulation results which MOSFET model acquired from vend or and the presented test system. The test system is easy to be organized and is convenient to use for engineers.

Comparative reliability assessment of Planar and Trench Gate Power MOSFETs for Automotive Applications
Romeo Letor, STMicroelectronics, China
Antonio Testa, University of Messina, Italy
S. De Caro, University of Messina, Italy
S. Panarello, University of Messina, Italy
S. Patané, University of Messina, Italy
S. Russo, STMicroelectronics, Italy
S. Poma, STMicroelectronics, Italy
D. Patti, STMicroelectronics, Italy

Advanced device design techniques have been recently introduced in the automotive field as an answer to the demand of even more reliable devices. A key role in these techniques is played by the reliability assessment, a procedure that estimates the expected lifetime of devices under development according to the assigned mission profile. In this paper a planar StripFET structure and a conventional trench gate structure are compared in terms of reliability issues. A key aspect of the reliability assessment procedure accomplished is an experimental dynamic analysis of the temperature distribution over the metal source surface, useful to correlate electric working conditions with thermo-mechanical stresses.

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Lifetime estimation of Superjunction Power MOSFETs under short circuit and repeated avalanche operations
Romeo Letor, STMicroelectronics, China
Antonio Testa, University of Messina, Italy

The paper deals with the reliability assessment of new Superjunction MOSFET devices for motor control applications in the automotive field. Specifically, the effects of short-circuit conditions and repetitive avalanche operations on the lifetime are investigated. In fact, the thermo-mechanical stress generated on the source metallization by these operations has been recognized as the main mechanism of ageing in MOSFETs equipping DC/DC converters for motor control applications, and the cause of a high rate of premature failures. Therefore, the lifetime of new Superjunction MOSFETS is estimated using an experimental thermodynamic analysis of the temperature evolution over the source metallization. A comparison in terms of expected lifetime under short circuit and repeated avalanche operations with traditional Gate Trench MOSFETS having similar characteristics is finally accomplished.