Conference

Dynamic current sharing of high power IGBT’s in parallel and the influencing factors
Vishal Jadhav, Infineon Technologies, India
Yizheng Zhou, Infineon Technologies, China

In this paper, the dynamic behaviour of high power IGBT’s in parallel, the IGBT parameters influencing paralleling and other external parameter which are influential are discussed. Experimental results showing dynamic current sharing behaviour of IGBT’s under single gate driver operation, under multiple gate driver operation, with different gate cable lengths for IGBT driving, with external induced magnetic field etc are shared in this paper. Different mechanical setup of the DC/AC busbar’s are made to show the effect of the symmetrical commutation loop resistance & inductance on current sharing in paralleled IGBT’s.

Latest 6.5kV IGBT with trench-field stop technology in traction application
Yizheng Zhou , Infineon Technologies, China
Haiqin Weng, Infineon Technologies, China

To give an overview of this latest 6.5kV IGBT module and its benefit for traction application

11:00

Optimizing power MOSFETs and IGBTs’ Common Mode and Differential Mode Noise Rejection
Robert Krause, Fairchild Semiconductor , United States of America

The operation of high power MOSFET and IGBTs in multiphase power conversion applications can be compromised by electrical noise that corrupts the power semiconductor’s drive signals. This paper will offer techniques that can improve the common mode and differential mode rejection of power MOSFET and IGBTs driving circuitry. It will discus optimizing the gate drive’s noise immunity by using optically coupled MOSFET drivers. The paper will also cover sources of common mode noise, and methods to improve noise rejection. It presents LED interface circuitry which enhances the driver’s noise immunity. Lastly reducing noise susceptibility of the optocoupler’s bootstrap power supply will be covered.

11:30

High Speed IGBT with MOSFET-like switching behaviour
Davide Chiola, Infineon Technologies, Austria
Holger Hüsken, Infineon Technologies, Germany
Thomas Kimmer, Infineon Technologies, Austria

The IGBT is traditionally the device of choice in low switching frequency applications like Inverterized Motor Drives thanks to its low conduction losses. At the same time the IGBT can be operated at high current density, hence it provides a cost effective-solution were higher power density and lower cost are required. For this reason its utilization also in higher switching frequency applications like SMPS, UPS, Welding, Induction Heating and more recently Solar Inverters has been considered. We present in this paper the 3d generation of 600V High speed IGBT (“HS3” Product family) from Infineon Technologies optimized for High frequency hard-switching applications. The main device features are reviewed, and the benefit for the target applications are highlighted.