Conference

Film Technology To Replace Electrolytic Technology in Wind Turbine and Solar Power applications
Gilles Terzulli, AVX Global Power , France

Comparative Evaluation of SiC-JFETs applied to Power Converters in Renewable Energy Systems
Samuel Araujo, University of Kassel, Germany
Benjamin Sahan, University of Kassel, Germany
Peter Zacharias, University of Kassel, Germany
Winner Best Paper Award PCIM Europe 2009

Photovoltaic systems have been considered as one of most promising fields of application for SiC semiconductors mainly due to the requirements for very high efficiency values. Several other system aspects like volume and cost may also profit from the interesting characteristics of such innovative devices. Switches based on SiC show a large variety of technologies, ranging from bipolar devices like BJTs to unipolar devices like MOSFETs and JFETs. The latter is rather uncommon in power electronic applications but seems very promising, mainly due to its relative structural simplicity. There are mainly three variants of SiC-JFETs (Enhancement-mode normally-off, Cascode and normally-on) which will be presented and discussed in this publication.

11:00

New Generation High Power IGBT Modules Applied to Wind Converter
Zhenbo Zhao, Infineon Technologies, China
Haiquing Weng, Infineon Technologies, China
Xi Zhang, Infineon Technologies, Germany

In recent years, wind power market has been emerged with the development of renewable energy. The wind converter up to Mega Watt power capacity is playing a crucial and unanticipated role as power generation and conversion. Infineon provides the latest high-power modules with 1700V IGBT4 in PrimePACKTM and IHM-B family with higher operational junction temperature and increased power cycling capability. This paper presents the respective features and performances of IGBT module in combination with the requirements of wind converter, and shows the examples of 2MW double-fed converter with paralleled PrimePACKTM and IHM-B module with soft switching behavior respectively.

11:30

Trend of IGBT for High Switching Frequency Applications
Minghui Zhan, Fuji Electric Device Technology, China
Taku Takaku, Fuji Electric Corp. of America, United States of America
Seiki Igarashi, Fuji Electric Systems, Japan
Nominated for the Best Paper Award

In the recent years, the market of welding machine, inductive heating, plasma cutter and power supplies for medical apparatus has been expanding. These equipments are normally operated at the high frequency range as 20~50 kHz. Hence, IGBT suitable for high frequency application is a must. This paper introduces newly developed high-speed IGBT modules specifically optimized for these high frequency applications. Lower switching loss was achieved by optimizing trade-off of IGBT and FWD chip, like reducing doping density of backside p+ layer, shorting cell pitch, etc. A further improvement of efficiency and miniaturization for the power electronic equipment can be achieved by applying these high speed modules.