Conference

With superior material properties, wide bandgap power semiconductor devices (SiC and GaN) can offer performances orders-of-magnitude better than their silicon counterparts. As a result, they are widely expected to be the next generation power devices. The extensive R & D efforts since the mid 1990s have provided a solid foundation for the commercialization of these wide bandgap power devices.

In the last 15 years, various kingds of SiC switching power devices have been developed, including Schottky barrier diodes (SBD), P-i-N diodes, BJTs, JFETs, MOSFETs, IGBTs and GTOs etc. Their voltage ratings covered a range of 300V to as high as 20kV. Current-carrying capability of a single chip has reached 50~100A level. Notably, SBDs at 600V and 1200V levels have been successfully commercialized and adopted in many high frequency power electronics circuits and systems. At the same time, three terminal power switching transistors are under continued intensive research, preparing for their final introduction into the commercial market.

High quality GaN materials are historically grown on SiC or Sapphire substrates and GaN research activities have been much focused on RF power devices. Recently, device quality GaN films have been successfully grown on large diameter Si substrates. GaN power switching devices have since seen under intensive developments. Single chip devices with ratings higher than 1kV/10A have been reported with excellent on-state resistances and switching characteristics. While still at its early stage of research, GaN power switching devices have great development potential.

On the other hand, power integrated circuits able to handle 600V/2A have also been reported on SiC.

In this paper, developments and current status of wide bandgap power semiconductor devices will be reviewed. Remaining challenges and trends for future developments will be discussed.