Conference

IR-Observation of an Active Power Cycling Failure
Florian Lang, SEMIKRON Elektronik, Germany
Uwe Scheuermann, SEMIKRON Elektronik , Germany
Stefan Schuler, SEMIKRON Elektronik, Germany
Nominated for the Best Paper Award

The lifetime of power modules during active power cycling is of fundamental importance for the reliability of these components in most applications. Especially the immediate chip interconnections are stressed by repeated load cycles, resulting in solder fatigue and wire bond lift-off as the dominant failure mechanisms in end-of-life power cycling tests. Wire bond degradation can be detected by steep increments of the forward voltage drop of the device. Monitoring an IGBT during active power cycling with a high resolution IR-camera reveals that these stepwise increments are not attributed to a complete single wire bond breakdown, but rather to an instantaneous increase in the resistance of the wire bond. The same wire bond that ceases to conduct current after such a voltage drop increment can resume transporting current in a later state of device degradation.

Thermal management of IGBT module systems
Yoshitaka Nishimura, Fuji Electric Systems, Japan
Kazunuga Oonishi, Fuji Electric Systems, Japan
Fumihiko Momose, Fuji Electric Systems, Japan
Tomoaki Goto, Fuji Electric Systems, Japan

At the time of IGBT module use, mass heat occur the jointed area of IGBT module structure is destroyed by heat destruction and the CTE mismatch of materials. Therefore the lifetime of an IGBT module varies significantly depending on materials used and structural design. In this time, we investigated thermal designs of IGBT module systems. The following were the main findings: (a) optimization of IGBT chip disposition and using high strength solder, we can achieve high reliability in a large current region.(b) thermal grease thickness and characteristics was influence of IGBT module lifetime

11:00

BSD embedded new series super mini DIPIPM Ver.4
Liang Xiao Guang, Mitsubishi Electric Corporation, Japan
Masataka Shiramizu, Mitsubishi Electric Corporation, Japan
Akihisa Yamamoto, Mitsubishi Electric Corporation, Japan
Chihiro Tadokoro, Mitsubishi Electric Corporation, Japan
Toshiya Nakano, Mitsubishi Electric Corporation, Japan

This paper presents a new series super mini Dual In-line Package Intelligent Power Module(DIPIPMTM) Ver.4 developed by Mitsubishi Electric for applications like air conditioner, washing machine, refrigerator and industrial motor.

11:30

IGBT module with improved load cycle capability for automotive application
John Gee, SEMIKRON Commercial (Zhuhai), China

IGBT modules for automotive applications are not comparable with standard IGBT modules. The high temperature range, many start-stop cycles and a very high requirement for reliability are only some key points. Temperature and load cycle will create mechanical stress in a standard IGBT module. Standard IGBT modules are designed with many different material layers. Every layer of the IGBT module has different coefficient of thermal expansion. The temperature difference between the layers will generate mechanical force and this force will damage the IGBT module after a certain time. In this paper we will introduce an IGBT module which uses the new Sinter technology to connect the IGBT-chip to the isolated DCB. Semikron uses silver powder for the sinter layer.